DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zou, Taoyu | - |
dc.contributor.author | HYUNG, JUN KIM | - |
dc.contributor.author | KIM, SOONHYO | - |
dc.contributor.author | LIU, AO | - |
dc.contributor.author | CHOI, MIN YEONG | - |
dc.contributor.author | HAKSOON, JUNG | - |
dc.contributor.author | HUIHUI, ZHU | - |
dc.contributor.author | YOU, INSANG | - |
dc.contributor.author | YOUJIN, REO | - |
dc.contributor.author | WOOJU, LEE | - |
dc.contributor.author | Yong-Sung Kim | - |
dc.contributor.author | KIM, CHEOL JOO | - |
dc.contributor.author | Noh, Yong-Young | - |
dc.date.accessioned | 2024-02-27T09:50:37Z | - |
dc.date.available | 2024-02-27T09:50:37Z | - |
dc.date.created | 2024-02-18 | - |
dc.date.issued | 2023-02 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/120423 | - |
dc.description.abstract | Semiconducting ink based on 2D single-crystal flakes with dangling-bond-free surfaces enables the implementation of high-performance devices on form-free substrates by cost-effective and scalable printing processes. However, the lack of solution-processed p-type 2D semiconducting inks with high mobility is an obstacle to the development of complementary integrated circuits. Here, a versatile strategy of doping with Br2 is reported to enhance the hole mobility by orders of magnitude for p-type transistors with 2D layered materials. Br2-doped WSe2 transistors show a field-effect hole mobility of more than 27 cm2 V−1 s−1, and a high on/off current ratio of ≈107, and exhibits excellent operational stability during the on-off switching, cycling, and bias stressing testing. Moreover, complementary inverters composed of patterned p-type WSe2 and n-type MoS2 layered films are demonstrated with an ultra-high gain of 1280 under a driving voltage (VDD) of 7 V. This work unveils the high potential of solution-processed 2D semiconductors with low-temperature processability for flexible devices and monolithic circuitry. © 2022 Wiley-VCH GmbH. | - |
dc.language | English | - |
dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.relation.isPartOf | Advanced Materials | - |
dc.title | High-Performance Solution-Processed 2D P-Type WSe2 Transistors and Circuits through Molecular Doping | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.202208934 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Advanced Materials | - |
dc.identifier.wosid | 000899407600001 | - |
dc.citation.title | Advanced Materials | - |
dc.contributor.affiliatedAuthor | Zou, Taoyu | - |
dc.contributor.affiliatedAuthor | HYUNG, JUN KIM | - |
dc.contributor.affiliatedAuthor | KIM, SOONHYO | - |
dc.contributor.affiliatedAuthor | LIU, AO | - |
dc.contributor.affiliatedAuthor | CHOI, MIN YEONG | - |
dc.contributor.affiliatedAuthor | HAKSOON, JUNG | - |
dc.contributor.affiliatedAuthor | HUIHUI, ZHU | - |
dc.contributor.affiliatedAuthor | YOU, INSANG | - |
dc.contributor.affiliatedAuthor | YOUJIN, REO | - |
dc.contributor.affiliatedAuthor | WOOJU, LEE | - |
dc.contributor.affiliatedAuthor | KIM, CHEOL JOO | - |
dc.contributor.affiliatedAuthor | Noh, Yong-Young | - |
dc.identifier.scopusid | 2-s2.0-85144196125 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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