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Cited 18 time in webofscience Cited 19 time in scopus
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dc.contributor.authorLee, G-
dc.contributor.authorHwang, CG-
dc.contributor.authorKim, ND-
dc.contributor.authorChung, J-
dc.contributor.authorKim, JS-
dc.contributor.authorLee, S-
dc.date.accessioned2015-06-25T03:04:38Z-
dc.date.available2015-06-25T03:04:38Z-
dc.date.created2009-03-13-
dc.date.issued2007-12-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000007383en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12166-
dc.description.abstractWe have studied the stability of a thallium nanocluster of various numbers of atoms (N=1,2,...,10) on a Si(111)-7x7 substrate using density functional theory total energy calculations. We have compared it with clusters of other group III elements (Al, Ga, and In). Thallium is found to be unstable with the triangular cluster, which has been known to be stable for other group III elements. Instead, a slightly different structure, in which Si atop atoms are lower than thallium atoms in height by 2.56 angstrom, was found to be quite stable. Such an abnormal structure originates from the inert pair of 6s(2) electrons due to the significant spin-orbit interaction. The initial relaxed N=6 Tl cluster continues to grow with increasing N up to N=9 in the faulted-half unit cell, which is consistent with experimental observations.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleAb initio study of thallium nanoclusters on Si(111)-7x7-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.76.245409-
dc.author.googleLee, Gen_US
dc.author.googleHwang, CGen_US
dc.author.googleLee, Sen_US
dc.author.googleKim, JSen_US
dc.author.googleChung, Jen_US
dc.author.googleKim, NDen_US
dc.relation.volume76en_US
dc.relation.issue24en_US
dc.contributor.id10052578en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.76, no.24-
dc.identifier.wosid000251986600090-
dc.date.tcdate2019-01-01-
dc.citation.number24-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume76-
dc.contributor.affiliatedAuthorChung, J-
dc.identifier.scopusid2-s2.0-37149002785-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc17-
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRON-GAS-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusADSORPTION-
dc.subject.keywordPlusDIFFUSION-
dc.subject.keywordPlusPSEUDOPOTENTIALS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusMETALS-
dc.subject.keywordPlusENERGY-
dc.subject.keywordPlusATOMS-
dc.subject.keywordPlusAG-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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