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Cited 10 time in webofscience Cited 12 time in scopus
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dc.contributor.authorGutkin, MY-
dc.contributor.authorSheinerman, AG-
dc.contributor.authorArgunova, TS-
dc.contributor.authorYi, JM-
dc.contributor.authorJe, JH-
dc.contributor.authorNagalyuk, SS-
dc.contributor.authorMokhov, EN-
dc.contributor.authorMargaritondo, G-
dc.contributor.authorHwu, Y-
dc.date.accessioned2015-06-25T03:04:45Z-
dc.date.available2015-06-25T03:04:45Z-
dc.date.created2009-02-28-
dc.date.issued2007-08-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000007128en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12169-
dc.description.abstractThe role of micropipes in pore formation in SiC crystals with foreign polytype inclusions is studied by means of synchrotron phase sensitive radiography, optical and scanning electron microscopies, and color photoluminescence. The pores at the inclusion boundaries are revealed, and their shapes and locations are analyzed. It is found that the pores arise due to the attraction of micropipes by the foreign polytype interfaces, followed by micropipe coalescence. The observed pores have tubular or slit shapes. Tubular pores nucleate at the inclusion corners, where the inclusion-associated stresses are concentrated. Slit pores spread between them and follow the shape of the inclusion boundaries. We explain the observations within a two-dimensional model of elastic interaction between micropipes and inclusion boundaries, which accounts for free surfaces of micropipes.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleRole of micropipes in the formation of pores at foreign polytype boundaries in SiC crystals-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1103/PhysRevB.76.064117-
dc.author.googleGutkin, MYen_US
dc.author.googleSheinerman, AGen_US
dc.author.googleHwu, Yen_US
dc.author.googleMargaritondo, Gen_US
dc.author.googleMokhov, ENen_US
dc.author.googleNagalyuk, SSen_US
dc.author.googleJe, JHen_US
dc.author.googleYi, JMen_US
dc.author.googleArgunova, TSen_US
dc.relation.volume76en_US
dc.relation.issue6en_US
dc.contributor.id10123980en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.76, no.6-
dc.identifier.wosid000249155200032-
dc.date.tcdate2019-01-01-
dc.citation.number6-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume76-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-34548213138-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc9-
dc.type.docTypeArticle-
dc.subject.keywordPlusSILICON-CARBIDE-
dc.subject.keywordPlusSINGLE-CRYSTALS-
dc.subject.keywordPlusBULK CRYSTALS-
dc.subject.keywordPlusSUBLIMATION GROWTH-
dc.subject.keywordPlusMONOCRYSTALS-
dc.subject.keywordPlusDEFECTS-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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