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Cited 14 time in webofscience Cited 15 time in scopus
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dc.contributor.authorChung, Y-
dc.contributor.authorJo, S-
dc.contributor.authorChang, DI-
dc.contributor.authorLee, HJ-
dc.contributor.authorZaffalon, M-
dc.contributor.authorUmansky, V-
dc.contributor.authorHeiblum, M-
dc.date.accessioned2015-06-25T03:04:52Z-
dc.date.available2015-06-25T03:04:52Z-
dc.date.created2009-08-21-
dc.date.issued2007-07-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000007063en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12172-
dc.description.abstractA consistent approach in forming the 0.7 structure by using a quantum dot rather than a quantum point contact is demonstrated. With this scheme, it was possible to tune on and off the 0.7 structure. The 0.7 structure continuously evolved into a normal integer conductance plateau by varying the tuning condition. Unlike the conventional 0.7 plateau, the new 0.7 structure was observed even at low electron temperatures down to 100 mK, with unprecedented flatness. From our results, it is concluded that electron interference should be taken into consideration to explain the 0.7 structure.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleTunable 0.7 conductance plateau in quantum dots-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.76.035316-
dc.author.googleChung, Yen_US
dc.author.googleJo, Sen_US
dc.author.googleHeiblum, Men_US
dc.author.googleUmansky, Ven_US
dc.author.googleZaffalon, Men_US
dc.author.googleLee, HJen_US
dc.author.googleChang, DIen_US
dc.relation.volume76en_US
dc.relation.issue3en_US
dc.relation.startpage35316en_US
dc.relation.lastpage35316en_US
dc.contributor.id10080084en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.76, no.3, pp.35316 - 35316-
dc.identifier.wosid000248500800091-
dc.date.tcdate2019-01-01-
dc.citation.endPage35316-
dc.citation.number3-
dc.citation.startPage35316-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume76-
dc.contributor.affiliatedAuthorLee, HJ-
dc.identifier.scopusid2-s2.0-34447305768-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc13-
dc.type.docTypeArticle-
dc.subject.keywordPlusDIMENSIONAL ELECTRON-GAS-
dc.subject.keywordPlusQUANTIZATION-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusWIRE-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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