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dc.contributor.authorMialitsin, A-
dc.contributor.authorKim, JS-
dc.contributor.authorKremer, RK-
dc.contributor.authorBlumberg, G-
dc.date.accessioned2015-06-25T03:05:52Z-
dc.date.available2015-06-25T03:05:52Z-
dc.date.created2010-05-05-
dc.date.issued2009-02-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000021141en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12200-
dc.description.abstractPolarized Raman scattering has been performed on CaC6 superconductor. We identify two of the three Raman-active E-g phonon modes at 440 and 1508 cm(-1) expected for the R (3) over barm space group of CaC6. These first-order scattering modes appear along with the D and G bands around 1300 and 1600 cm(-1) that are similar in origin to the corresponding bands in plain graphite. The intensities of the D and G bands in CaC6 correlate with degree of disorder. The D band arises from the double resonant Raman-scattering process; its frequency shifts as a function of excitation energy with similar to 35 cm(-1)/eV. The double resonant Raman scattering probes phonon excitations with finite wave vector q. We estimate the characteristic spacing of structural defects to be on the scale of about 100 angstrom by comparing the intensity of the D band and the 1508 cm(-1) E-g mode in CaC6 to calibrated intensity ratio of analogous bands in disordered graphites. A sharp superconducting coherence peak at 24 cm(-1) is observed below T-c.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAmerican Physical Society-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleRaman scattering from the CaC6 superconductor in the presence of disorder-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.79.064503-
dc.author.googleMialitsin, Aen_US
dc.author.googleKim, JSen_US
dc.author.googleBlumberg, Gen_US
dc.author.googleKremer, RKen_US
dc.relation.volume79en_US
dc.relation.issue6en_US
dc.contributor.id10202686en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.79, no.6-
dc.identifier.wosid000263815600065-
dc.date.tcdate2019-01-01-
dc.citation.number6-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume79-
dc.contributor.affiliatedAuthorKim, JS-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc10-
dc.type.docTypeArticle-
dc.subject.keywordPlusGRAPHITE-
dc.subject.keywordPlusPHONONS-
dc.subject.keywordPlusBAND-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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