DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gray, AX | - |
dc.contributor.author | Janotti, A | - |
dc.contributor.author | Son, J | - |
dc.contributor.author | LeBeau, JM | - |
dc.contributor.author | Ueda, S | - |
dc.contributor.author | Yamashita, Y | - |
dc.contributor.author | Kobayashi, K | - |
dc.contributor.author | Kaiser, AM | - |
dc.contributor.author | Sutarto, R | - |
dc.contributor.author | Wadati, H | - |
dc.contributor.author | Sawatzky, GA | - |
dc.contributor.author | Van de Walle, CG | - |
dc.contributor.author | Stemmer, S | - |
dc.contributor.author | Fadley, CS | - |
dc.date.accessioned | 2015-06-25T03:07:46Z | - |
dc.date.available | 2015-06-25T03:07:46Z | - |
dc.date.created | 2013-04-11 | - |
dc.date.issued | 2011-08-03 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.other | 2015-OAK-0000027459 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/12250 | - |
dc.description.abstract | In order to understand the influence of strain and film thickness on the electronic structure of thin films of strongly correlated oxides, we have applied hard x-ray photoemission (HXPS) at 6 keV, soft x-ray photoemission (XPS) at 1.5 keV, and transmission electron microscopy to epitaxial LaNiO3 films deposited on two substrates: LaAlO3 (compressive strain) and (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) (tensile strain). Using inelastic attenuation lengths in LaNiO3 determined from the HXPS data, we have decomposed valence-band spectra into layer-specific contributions. This decomposition is validated by comparing with the results of first-principles calculations using a hybrid functional. The resultant thin-film LaNiO3 densities of states exhibit significant differences in spectral weights for the thinnest LaNiO3 films. A gap opening consistent with a metal-to-insulator transition is observed for the thinnest 2.7 nm LaNiO3 film on an (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) substrate, with a similar gap opening also being observed in complementary soft x-ray photoemission at 1.5 keV for a thinner 1.4 nm film on an LaAlO3 substrate. A metal-to-insulator transition in very thin nm-scale films of LaNiO3 is thus suggested as a general phenomenon. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | Americal Physical Society | - |
dc.relation.isPartOf | Physical Review B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Insulating state of ultrathin epitaxial LaNiO3 thin films detected by hard x-ray photoemission | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1103/PHYSREVB.84.075104 | - |
dc.author.google | Gray, AX | en_US |
dc.author.google | Janotti, A | en_US |
dc.author.google | Fadley, CS | en_US |
dc.author.google | Stemmer, S | en_US |
dc.author.google | Van de Walle, CG | en_US |
dc.author.google | Sawatzky, GA | en_US |
dc.author.google | Wadati, H | en_US |
dc.author.google | Sutarto, R | en_US |
dc.author.google | Kaiser, AM | en_US |
dc.author.google | Kobayashi, K | en_US |
dc.author.google | Yamashita, Y | en_US |
dc.author.google | Ueda, S | en_US |
dc.author.google | LeBeau, JM | en_US |
dc.author.google | Son, J | en_US |
dc.relation.volume | 84 | en_US |
dc.relation.issue | 7 | en_US |
dc.contributor.id | 10138992 | en_US |
dc.relation.journal | Physical Review B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Physical Review B, v.84, no.7 | - |
dc.identifier.wosid | 000293445500003 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 7 | - |
dc.citation.title | Physical Review B | - |
dc.citation.volume | 84 | - |
dc.contributor.affiliatedAuthor | Son, J | - |
dc.identifier.scopusid | 2-s2.0-80052413180 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 22 | - |
dc.description.scptc | 23 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | PHOTOELECTRON ANGULAR-DISTRIBUTION | - |
dc.subject.keywordPlus | AUGER-ELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | PARAMETERS | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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