Band-gap expansion in the surface-localized electronic structure of MoS2(0002)
SCIE
SCOPUS
- Title
- Band-gap expansion in the surface-localized electronic structure of MoS2(0002)
- Authors
- Han, SW; Cha, GB; Frantzeskakis, E; Razado-Colambo, I; Avila, J; Park, YS; Kim, D; Hwang, J; Kang, JS; Ryu, S; Yun, WS; Hong, SC; Asensio, MC
- Date Issued
- 2012-09
- Publisher
- American Physical Society
- Abstract
- The electronic band structure of MoS2 single crystals has been investigated using angle-resolved photoelectron spectroscopy and first-principles calculations. The orbital symmetry and k dispersion of these electronic states responsible for the direct and the indirect electronic band gaps have been unambiguously determined. By experimentally probing an increase of the electronic band gap, we conclude that a MoS2 (0002) surface localized state exists just below the valence band maximum at the Gamma point. This electronic state originates from the sulfur planes within the topmost layer. Our comprehensive study addresses the surface electronic structure of MoS2 and the role of van der Waals interlayer interactions.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12270
- DOI
- 10.1103/PHYSREVB.86.115105
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- Physical Review B - Condensed Matter and Materials Physics, vol. 86, no. 11, page. 115105, 2012-09
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