Flexible field-effect transistors with high-quality and uniform single-layer graphene for high mobility
SCIE
SCOPUS
- Title
- Flexible field-effect transistors with high-quality and uniform single-layer graphene for high mobility
- Authors
- Park, Hyunjin; Kwon, Jimin; Seo, Jihyung; Kim, Kiho; Kim, Yun Ho; Jung, Sungjune
- Date Issued
- 2024-04
- Publisher
- Institute of Physics Publishing
- Abstract
- In this work, a fully flexible graphene field-effect transistor with high carrier mobility is reported. Patterned high-quality and uniform single-layer graphene films are successfully realized by combining the selective growth on a patterned copper foil and the direct transfer method to minimize degradation factors. The selectively grown single-layer graphene is directly transferred to the target substrate through the deposition of poly-para-xylylene (Parylene) C. The quality of the graphene films is confirmed by Raman spectroscopy. The analysis reveals that the use of Parylene C as the substrate, gate dielectric, and encapsulation layer has the advantage of reducing the scattering by the optical phonons and charge puddles. The estimated residual carrier density is 1.72 x 1011 cm-2, and the intrinsic hole and electron carrier mobilities are found to be as high as 10 260 and 10 010 cm2 V-1 s-1, respectively. This study can pave the way for the development and mass production of high-performance and fully flexible graphene electronics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/123137
- DOI
- 10.1088/1361-6641/ad3111
- ISSN
- 0268-1242
- Article Type
- Article
- Citation
- Semiconductor Science and Technology, vol. 39, no. 4, page. 04LT01, 2024-04
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