Photoluminescence Imaging and Electrical Characterization of Defects in van der Waals Materials
- Title
- Photoluminescence Imaging and Electrical Characterization of Defects in van der Waals Materials
- Authors
- 강하빈
- Date Issued
- 2024
- Publisher
- 포항공과대학교
- Abstract
- 2D van der Waals materials possess unique optical, electrical, and physical characteristics, leading to their applications in electronics, photonics, and optoelectronics. Hexagonal boron nitride (hBN), an insulating material with a wide and indirect bandgap, features diverse color centers across NIR to UV wavelengths. As a gate dielectric, color centers within hBN increase the device's leakage current, emphasizing the importance of understanding their spatial distribution and influence on the device's conductivity. This study demonstrated that a device with a high density of carbon color centers in hBN exhibited a different tunneling mechanism for current compared to a defect-free hBN device, ultimately revealing that defects reduced the electrical durability of the device. Furthermore, a new platform for material optical analysis was developed by employing machine learning to analyze the photoluminescence (PL) of hBN's color centers and interlayer excitons observed in a WSe2/MoSe2 heterostructure.
- URI
- http://postech.dcollection.net/common/orgView/200000736701
https://oasis.postech.ac.kr/handle/2014.oak/123267
- Article Type
- Thesis
- Files in This Item:
- There are no files associated with this item.
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