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Cited 15 time in webofscience Cited 15 time in scopus
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dc.contributor.authorLee, JA-
dc.contributor.authorKang, IS-
dc.date.accessioned2015-06-25T03:12:54Z-
dc.date.available2015-06-25T03:12:54Z-
dc.date.created2014-12-26-
dc.date.issued2014-09-03-
dc.identifier.issn1539-3755-
dc.identifier.other2015-OAK-0000030605en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12392-
dc.description.abstractA nanoslit is a long narrow opening between two parallel plates that are nanometers apart from each other. When an electrolyte solution is present inside a nanoslit, an overlapped electrical double layer (EDL) is formed and there exist distributions of the osmotic pressure and the Maxwell stress across the nanoslit. It is well known that the total normal stress (osmotic pressure contribution + Maxwell stress contribution) in the direction normal to the nanoslit surface is uniform and the value is the same as the osmotic pressure at the centerline. On the other hand, it is not well known that the total normal stress in the direction parallel to the slit surface is not uniform. When there is an electrolyte- gas interface inside a nanoslit, this total normal stress in the direction parallel to the slit surface generates the electrocapillarity effect. In the present work, the electromechanical approach is adopted to estimate the electrocapillarity effect in terms of the slit surface potential (or the surface charge density), the gap size, and the bulk ion concentrations. In order to handle the problem analyically, it is assumed that the nanoslit problem is in the continuum range and the interface is initially flat. The deformation of the interface due to the nonuniform total normal stress along the interface is also obtained by using the first order perturbation method. The significance of the present work can be manifested by the fact that external voltage is frequently used in nanoscaled systems and the electrocapillarity effect should be considered in addition to the intrinsic capillarity due to surface tension.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW E-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.subjectELECTROWETTING-BASED ACTUATION-
dc.subjectPOISSON-BOLTZMANN EQUATION-
dc.subjectCARBON NANOTUBES-
dc.subjectDIELECTRIC SATURATION-
dc.subjectSURFACE-TENSION-
dc.subjectFREE-ENERGY-
dc.subjectFIELD-
dc.subjectDROPLETS-
dc.subjectPLATES-
dc.subjectFILMS-
dc.titleElectrocapillarity of an electrolyte solution in a nanoslit with overlapped electric double layer: Continuum approach-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1103/PHYSREVE.90.032401-
dc.author.googleLee, JAen_US
dc.author.googleKang, ISen_US
dc.relation.volume90en_US
dc.relation.issue3en_US
dc.contributor.id10104008en_US
dc.relation.journalPHYSICAL REVIEW Een_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW E, v.90, no.3-
dc.identifier.wosid000341269900005-
dc.date.tcdate2019-01-01-
dc.citation.number3-
dc.citation.titlePHYSICAL REVIEW E-
dc.citation.volume90-
dc.contributor.affiliatedAuthorKang, IS-
dc.identifier.scopusid2-s2.0-84907482203-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc7-
dc.description.scptc6*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTROWETTING-BASED ACTUATION-
dc.subject.keywordPlusPOISSON-BOLTZMANN EQUATION-
dc.subject.keywordPlusDIELECTRIC SATURATION-
dc.subject.keywordPlusSURFACE-TENSION-
dc.subject.keywordPlusFREE-ENERGY-
dc.subject.keywordPlusDROPLETS-
dc.subject.keywordPlusPLATES-
dc.relation.journalWebOfScienceCategoryPhysics, Fluids & Plasmas-
dc.relation.journalWebOfScienceCategoryPhysics, Mathematical-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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강인석KANG, IN SEOK
Dept. of Chemical Enginrg
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