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dc.contributor.authorMoitra, A-
dc.contributor.authorKim, S-
dc.contributor.authorPark, SJ-
dc.contributor.authorKim, SG-
dc.contributor.authorHorstemeyer, MF-
dc.date.accessioned2015-06-25T03:32:57Z-
dc.date.available2015-06-25T03:32:57Z-
dc.date.created2012-03-08-
dc.date.issued2011-05-
dc.identifier.issn0350-820X-
dc.identifier.other2015-OAK-0000024854en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12875-
dc.description.abstractWe report a first-principles calculations to study the effect of a vanadium-carbon (VC) monolayer on the adsorption process of tungsten (W) and carbon (C) atoms onto tungsten-carbide (WC) (0001) suface. The essential configuration for the study is a supercell of hexagonal WC with a (0001) surface. When adding the VC monolayer, we employed the lowest energy configuration by examining various configurations. The total energy of the system is computed as a function of the W or C adatoms' height from the surface. The adsorption of a Wand C adatom on a clean WC (0001) surface is compared with that of a W and C adatom on a WC (0001) surface with VC monolayer. The calculations show that the adsorption energy increased for both Wand C adatoms in presence of the VC monolayer. Our results provide a fundamental understanding that can explain the experimentally observed phenomena of inhibited grain growth during sintering of WC or WC-Co powders in presence of VC.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherInternational Institute for the Science of Sintering-
dc.relation.isPartOfSCIENCE OF SINTERING-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleThe effect of vanadium-carbon monolayer on the adsorption of tungsten and carbon atoms on tungsten-carbide (0001) surface-
dc.typeArticle-
dc.contributor.college첨단원자력공학부en_US
dc.identifier.doi10.2298/SOS1102153M-
dc.author.googleMoitra, Aen_US
dc.author.googleKim, Sen_US
dc.author.googleHorstemeyer, MFen_US
dc.author.googleKim, SGen_US
dc.author.googlePark, SJen_US
dc.relation.volume43en_US
dc.relation.issue2en_US
dc.relation.startpage153en_US
dc.relation.lastpage159en_US
dc.contributor.id10060955en_US
dc.relation.journalSCIENCE OF SINTERINGen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIEen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationSCIENCE OF SINTERING, v.43, no.2, pp.153 - 159-
dc.identifier.wosid000296942600005-
dc.date.tcdate2018-03-23-
dc.citation.endPage159-
dc.citation.number2-
dc.citation.startPage153-
dc.citation.titleSCIENCE OF SINTERING-
dc.citation.volume43-
dc.contributor.affiliatedAuthorPark, SJ-
dc.identifier.scopusid2-s2.0-80054116452-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.scptc0*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordAuthorSintering-
dc.subject.keywordAuthorTungsten carbide-
dc.subject.keywordAuthorVanadium carbide-
dc.subject.keywordAuthorGrain growth inhibition-
dc.relation.journalWebOfScienceCategoryMaterials Science, Ceramics-
dc.relation.journalWebOfScienceCategoryMetallurgy & Metallurgical Engineering-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaMetallurgy & Metallurgical Engineering-

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박성진PARK, SEONG JIN
Dept of Mechanical Enginrg
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