DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, YJ | - |
dc.contributor.author | Yun, DJ | - |
dc.contributor.author | Jang, J | - |
dc.contributor.author | Park, S | - |
dc.contributor.author | An, TK | - |
dc.contributor.author | Kim, LH | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2015-07-22T19:06:13Z | - |
dc.date.available | 2015-07-22T19:06:13Z | - |
dc.date.created | 2015-06-18 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 1463-9076 | - |
dc.identifier.other | 2015-OAK-0000032819 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13226 | - |
dc.description.abstract | Solution-processed organic field effect transistors (OFETs), which are amenable to facile large-area processing methods, have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices. The low performance levels of n-type solution-processed bottom-contact OFETs unfortunately continue to pose a barrier to their commercialization. In this study, we introduced a combination of CVD-grown graphene source/drain (S/D) electrodes and fullerene (C-60) in a solution-processable n-type semiconductor toward the fabrication of n-type bottom-contact OFETs. The C-60 coating in the channel region was achieved by modifying the surface of the oxide gate dielectric layer with a phenyl group-terminated self-assembled monolayer (SAM). The graphene and phenyl group in the SAMs induced pi-pi interactions with C-60, which facilitated the formation of a C-60 coating. We also investigated the effects of thermal annealing on the reorganization properties and field-effect performances of the overlaying solution-processed C-60 semiconductors. We found that thermal annealing of the C-60 layer on the graphene surface improved the crystallinity of the face-centered cubic (fcc) phase structure, which improved the OFET performance and yielded mobilities of 0.055 cm(2) V-1 s(-1). This approach enables the realization of solution-processed C-60-based FETs using CVD-grown graphene S/D electrodes via inexpensive and solution-process techniques. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.subject | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject | SEMICONDUCTOR THIN-FILMS | - |
dc.subject | ORGANIC SEMICONDUCTOR | - |
dc.subject | INTERFACE | - |
dc.subject | TRANSPORT | - |
dc.subject | MOLECULE | - |
dc.subject | MOBILITY | - |
dc.subject | C-6 INJECTION | - |
dc.subject | ENERGY | - |
dc.title | Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1039/C4CP05787B | - |
dc.author.google | Jeong, YJ | en_US |
dc.author.google | Yun, DJ | en_US |
dc.author.google | Jang, J | en_US |
dc.author.google | Park, S | en_US |
dc.author.google | An, TK | en_US |
dc.author.google | Kim, LH | en_US |
dc.author.google | Kim, SH | en_US |
dc.author.google | Park, CE | en_US |
dc.relation.volume | 17 | en_US |
dc.relation.issue | 9 | en_US |
dc.relation.startpage | 6635 | en_US |
dc.relation.lastpage | 6643 | en_US |
dc.contributor.id | 10104044 | en_US |
dc.relation.journal | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.17, no.9, pp.6635 - 6643 | - |
dc.identifier.wosid | 000351435300054 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 6643 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 6635 | - |
dc.citation.title | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-84923362047 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 6 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | SEMICONDUCTOR THIN-FILMS | - |
dc.subject.keywordPlus | ORGANIC SEMICONDUCTOR | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | MOLECULE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | C-60 | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordPlus | ENERGY | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
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