DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sun, Q | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Park, SS | - |
dc.contributor.author | Lee, NY | - |
dc.contributor.author | Zhang, Y | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Cho, K | - |
dc.contributor.author | Cho, JH | - |
dc.date.accessioned | 2016-03-31T07:22:21Z | - |
dc.date.available | 2016-03-31T07:22:21Z | - |
dc.date.created | 2017-02-28 | - |
dc.date.issued | 2014-07-16 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.other | 2014-OAK-0000032432 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13560 | - |
dc.description.abstract | A novel device architecture for preparing a transparent and low-voltage graphene pressure-sensor matrix on plastic and rubber substrates is demonstrated. The coplanar gate configuration of the graphene transistor enables a simplified procedure. The resulting devices exhibit excellent device performance, including a high transparency of ca. 80% in the visible range, a low operating voltage less than 2 V, a high pressure sensitivity of 0.12 kPa(-1), and excellent mechanical durability over 2500 cycles. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | WILEY-VCH | - |
dc.relation.isPartOf | ADVANCED MATERIALS | - |
dc.title | Transparent, Low-Power Pressure Sensor Matrix based on Coplanar-Gate Graphene Transistors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1002/ADMA.201400918 | - |
dc.author.google | Sun, Q | - |
dc.author.google | Kim, DH | - |
dc.author.google | Park, SS | - |
dc.author.google | Lee, NY | - |
dc.author.google | Zhang, Y | - |
dc.author.google | Lee, JH | - |
dc.author.google | Cho, K | - |
dc.author.google | Cho, JH | - |
dc.relation.volume | 26 | - |
dc.relation.issue | 27 | - |
dc.relation.startpage | 4735 | - |
dc.contributor.id | 10077904 | - |
dc.relation.journal | ADVANCED MATERIALS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.26, no.27, pp.4735 - 4740 | - |
dc.identifier.wosid | 000339661100020 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 4740 | - |
dc.citation.number | 27 | - |
dc.citation.startPage | 4735 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 26 | - |
dc.contributor.affiliatedAuthor | Cho, K | - |
dc.identifier.scopusid | 2-s2.0-84904458739 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 78 | - |
dc.description.scptc | 61 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | ELECTRONIC SKIN | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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