Selective epitaxial growth of Si1-xGex films via the alternating gas supply of Si2H6, GeH4, and Cl-2: Effects of Cl-2 exposure
SCIE
SCOPUS
- Title
- Selective epitaxial growth of Si1-xGex films via the alternating gas supply of Si2H6, GeH4, and Cl-2: Effects of Cl-2 exposure
- Authors
- Park, SJ; Baik, S; Kim, H
- Date Issued
- 2012-12-01
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Si1-xGex films were epitaxially grown on Si(001) substrates at various ratios of flow rates of Si2H6 and GeH4. Si1-xGex films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si1-xGex growth step and Cl-2 exposure step. Injection of Cl-2 enhanced the selectivity of the selective growth of Si1-xGex by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl-2 resulted in decrease of the growth rate and Ge concentration of Si1-xGex film. Meanwhile, Ge concentration in Si1-xGex films was insignificantly affected by the variation of the flow rates and exposure durations of Cl-2. (C) 2012 Elsevier B.V. All rights reserved.
- Keywords
- Si1-xGex film; Selective epitaxial growth; Cl-2 exposure; CHEMICAL-VAPOR-DEPOSITION; SILICON-GERMANIUM; CHLORINE; SIGE; TEMPERATURE; HETEROSTRUCTURES; ADSORPTION; DEPENDENCE; KINETICS; SI(100)
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13927
- DOI
- 10.1016/J.MATLET.2012.08.036
- ISSN
- 0167-577X
- Article Type
- Article
- Citation
- MATERIALS LETTERS, vol. 88, page. 89 - 92, 2012-12-01
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- There are no files associated with this item.
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