Non-vacuum deposition of CIGS absorber films for low-cost thin film solar cells
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KCI
- Title
- Non-vacuum deposition of CIGS absorber films for low-cost thin film solar cells
- Authors
- Lee, D; Yong, K
- Date Issued
- 2013-07
- Publisher
- KOREAN INSTITUTE CHEMICAL ENGINEERS
- Abstract
- Thin film solar cells composed of chalcopyrite Cu(In1-xGax)(Se1-ySy)(2) (CIGSSe) absorbers have gained considerable attention in recent years in an effort to develop sustainable technologies for harnessing clean energy. Non-vacuum solution methods can reduce production costs by replacing vacuum-based deposition methods with large-scale, high-throughput processes. The efficient use of materials can reduce production costs. Non-vacuum processes generally rely on two sequential steps: solution-coating, followed by a post-annealing process. Depending on the point at which the CIGS phase evolves, non-vacuum processes can be categorized as nanoparticle (NP) approaches or molecular precursor approaches. These two types of liquid processes are believed to be compatible with a variety of applications, such as roll-to-roll coating for the production of flexible, portable devices. Additional thermal treatments using a gaseous chalcogen or oxygen can improve the absorber quality. This review describes the current status of chalcopyrite thin film solar cells fabrication methods via low-cost solution routes. An analysis of recently published reports describing liquid-based deposition methods is introduced, and the features of the development steps are compared. Finally, a discussion and future outlook are offered.
- Keywords
- CIGS; Thin Film Solar Cell; Non-vacuum Process; Solution Deposition; Nanoparticle; Molecular Precursor; FREE COUNTER ELECTRODE; NANOCRYSTAL INKS; MONODISPERSE NANOCRYSTALS; SOLVOTHERMAL SYNTHESIS; CUINSE2 NANOCRYSTALS; HIGHLY EFFICIENT; BUFFER LAYERS; BACK CONTACT; NANOPARTICLES; CU(IN,GA)SE-2
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13961
- DOI
- 10.1007/S11814-013-0101-0
- ISSN
- 0256-1115
- Article Type
- Article
- Citation
- KOREAN JOURNAL OF CHEMICAL ENGINEERING, vol. 30, no. 7, page. 1347 - 1358, 2013-07
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