DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, SK | - |
dc.contributor.author | Yang, JW | - |
dc.contributor.author | Kim, HH | - |
dc.contributor.author | Jo, SB | - |
dc.contributor.author | Kang, B | - |
dc.contributor.author | Bong, H | - |
dc.contributor.author | Lee, HC | - |
dc.contributor.author | Lee, G | - |
dc.contributor.author | Kim, KS | - |
dc.contributor.author | Cho, K | - |
dc.date.accessioned | 2016-03-31T07:51:16Z | - |
dc.date.available | 2016-03-31T07:51:16Z | - |
dc.date.created | 2015-02-04 | - |
dc.date.issued | 2014-08 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.other | 2014-OAK-0000031118 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14083 | - |
dc.description.abstract | The polymer-supported transfer of chemical vapor deposition (CVD)-grown graphene provides large-area and high-quality graphene on a target substrate; however, the polymer and organic solvent residues left by the transfer process hinder the application of CVD-grown graphene in electronic and photonic devices. Here, we describe an inverse transfer method (ITM) that permits the simultaneous transfer and doping of graphene without generating undesirable residues by using polymers with different functional groups. Unlike conventional wet transfer methods, the polymer supporting layer used in the ITM serves as a graphene doping layer placed at the interface between the graphene and the substrate. Polymers bearing functional groups can induce n-doping or p-doping into the graphene depending on the electron-donating or -withdrawing characteristics of functional groups. Theoretical models of dipole layer induced graphene doping offered insights into the experimentally measured change in the work function and the Dirac point of the graphene. Finally, the electrical properties of pentacene field effect transistors prepared using graphene electrodes could be enhanced by employing the ITM to introduce a polymer layer that tuned the work function of graphene. The versatility of polymer functional groups suggests that the method developed here will provide valuable routes to the development of applications of CVD-grown graphene in organic electronic devices. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS NANO | - |
dc.subject | graphene | - |
dc.subject | chemical vapor deposition | - |
dc.subject | graphene transfer | - |
dc.subject | contact doping | - |
dc.subject | work function | - |
dc.subject | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | SOURCE/DRAIN ELECTRODES | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | QUANTUM CAPACITANCE | - |
dc.subject | EPITAXIAL GRAPHENE | - |
dc.subject | LAYER GRAPHENE | - |
dc.subject | FILMS | - |
dc.subject | TRANSPARENT | - |
dc.subject | OXIDE | - |
dc.title | Inverse Transfer Method Using Polymers with Various Functional Groups for Controllable Graphene Doping | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1021/NN503329S | - |
dc.author.google | Lee, SK | - |
dc.author.google | Yang, JW | - |
dc.author.google | Kim, HH | - |
dc.author.google | Jo, SB | - |
dc.author.google | Kang, B | - |
dc.author.google | Bong, H | - |
dc.author.google | Lee, HC | - |
dc.author.google | Lee, G | - |
dc.author.google | Kim, KS | - |
dc.author.google | Cho, K | - |
dc.relation.volume | 8 | - |
dc.relation.issue | 8 | - |
dc.relation.startpage | 7968 | - |
dc.relation.lastpage | 7975 | - |
dc.contributor.id | 10077904 | - |
dc.relation.journal | ACS NANO | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS NANO, v.8, no.8, pp.7968 - 7975 | - |
dc.identifier.wosid | 000340992300042 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 7975 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 7968 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 8 | - |
dc.contributor.affiliatedAuthor | Cho, K | - |
dc.identifier.scopusid | 2-s2.0-84906658071 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 18 | - |
dc.description.scptc | 16 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SOURCE/DRAIN ELECTRODES | - |
dc.subject.keywordPlus | MONOLAYER GRAPHENE | - |
dc.subject.keywordPlus | LAYER GRAPHENE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | RAMAN | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | chemical vapor deposition | - |
dc.subject.keywordAuthor | graphene transfer | - |
dc.subject.keywordAuthor | contact doping | - |
dc.subject.keywordAuthor | work function | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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