Nitrogen-Doped Graphene Nanoplatelets from Simple Solution Edge-Functionalization for n-Type Field-Effect Transistors
SCIE
SCOPUS
- Title
- Nitrogen-Doped Graphene Nanoplatelets from Simple Solution Edge-Functionalization for n-Type Field-Effect Transistors
- Authors
- Dong Wook Chang; Eun Kwang Lee; Eun Yeob Park; Hojeong Yu; Hyun-Jung Choi; In-Yup Jeon; Gyung-Joo Sohn; Dongbin Shin; Noejung Park; Oh, JH; Liming Dai; Jong-Beom Baek
- Date Issued
- 2013-06-19
- Publisher
- American Chemical Society
- Abstract
- The development of a versatile method for nitrogen-doping of graphitic structure is an important challenge for many applications, such as energy conversions and storages and electronic devices. Here, we report a simple but efficient method for preparing nitrogen-doped graphene nanoplatelets via wet-chemical reactions. The reaction between monoketone (C=O) in graphene oxide (GO) and monoamine-containing compound produces imine (Shiff base) functionalized GO (iGO). The reaction between alpha-diketone in GO and 1,2-diamine (ortho-diamine)-containing compound gives stable pyrazine ring functionalized GO (pGO). Subsequent heat-treatments of iGO and pGO result in high-quality, nitrogen-doped graphene nanoplatelets to be designated as hiGO and hpGO, respectively. Of particular interest, hpGO was found to display the n-type field-effect transistor behavior with a charge neutral point (Dirac point) located at around 16 V. Furthermore, hpGO showed hole and electron mobilities as high as 11.5 and 12.4 cm(2)V(-1)s(-1), respectively.
- Keywords
- RAY PHOTOELECTRON-SPECTROSCOPY; CHEMICAL-VAPOR-DEPOSITION; OXYGEN REDUCTION REACTION; WALLED CARBON NANOTUBES; FEW-LAYER GRAPHENE; GRAPHITE OXIDE; ELECTROCATALYTIC ACTIVITY; HYDRAZINE VAPOR; LARGE-AREA; FILMS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14397
- DOI
- 10.1021/JA402555N
- ISSN
- 0002-7863
- Article Type
- Article
- Citation
- JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 135, no. 24, page. 8981 - 8988, 2013-06-19
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