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Ambipolar Semiconducting Polymers with pi-Spacer Linked Bis-Benzothiadiazole Blocks as Strong Accepting Units SCIE SCOPUS

Title
Ambipolar Semiconducting Polymers with pi-Spacer Linked Bis-Benzothiadiazole Blocks as Strong Accepting Units
Authors
Jonggi KimA-Reum HanJayeon HongGyoungsik KimJunghoon LeeTae Joo ShinOh, JHChangduk Yang
Date Issued
2014-09-09
Publisher
American Chemical Society
Abstract
Recognizing the importance of molecular coplanarity and with the aim of developing new, ideal strong acceptor-building units in semiconducting polymers for high-performance organic electronics, herein we present a simplified single-step synthesis of novel vinylene- and acetylene-linked bis-benzothiadiazole (VBBT and ABBT) monomers with enlarged planarity relative to a conventionally used acceptor, benzothiadiazole (BT). Along these lines, four polymers (PDPP-VBBT, PDPP-ABBT, PIID-VBBT, and PIID-ABBT) incorporating either VBBT or ABBT moieties are synthesized by copolymerizing with centro-symmetric ketopyrrole cores, such as diketopyrrolopyrrole (DPP) and isoindigo (IID), and their electronic, physical, and transistor properties are studied. These polymers show relatively balanced ambipolar transport, and PDPP-VBBT yields hole and electron mobilities as high as 0.32 and 0.13 cm(2) V-1 s(-1), respectively. Interestingly, the acetylenic linkages lead to enhanced electron transportation in ketopyrrole-based polymers, showing a decreased threshold voltage and inverting voltage in the transistor and inverter devices, respectively. The IID-based BBT polymers exhibit the inversion of the dominant polarity depending on the type of unsaturated carbon bridge. Owing to their strong electron-accepting ability and their highly pi-extended and planar structures, VBBT and ABBT monomers should be extended to the rational design of high-performance polymers in the field of organic electronics.
Keywords
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-MOBILITY; ELECTRON MOBILITIES; CONJUGATED POLYMERS; N-TYPE; TRANSPORTING POLYMER; PRINTED TRANSISTORS; CHARGE-TRANSPORT; HOLE MOBILITIES
URI
https://oasis.postech.ac.kr/handle/2014.oak/14403
DOI
10.1021/CM500800U
ISSN
0897-4756
Article Type
Article
Citation
CHEMISTRY OF MATERIALS, vol. 26, no. 17, page. 4933 - 4942, 2014-09-09
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오준학OH, JOON HAK
Dept. of Chemical Enginrg
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