DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jin, B | - |
dc.contributor.author | Taekyung Lim | - |
dc.contributor.author | Sanghyun Ju | - |
dc.contributor.author | Marat I. Latypov | - |
dc.contributor.author | Kim, HS | - |
dc.contributor.author | Meyya Meyyappan | - |
dc.contributor.author | Jeong-Soo Lee | - |
dc.date.accessioned | 2016-03-31T08:06:36Z | - |
dc.date.available | 2016-03-31T08:06:36Z | - |
dc.date.created | 2014-01-12 | - |
dc.date.issued | 2014-02-07 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.other | 2014-OAK-0000029728 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14582 | - |
dc.description.abstract | Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In2O3 nanowires with three different Ga compositions (Ga/(In + Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (similar to 40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | Institute of Physics (IOP) Publishing | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.subject | phase change random access memory | - |
dc.subject | Ga-doped In2O3 nanowire | - |
dc.subject | crystalline | - |
dc.subject | amorphous | - |
dc.subject | IN2O3 NANOWIRES | - |
dc.subject | DRIVEN | - |
dc.subject | NONVOLATILE | - |
dc.subject | TECHNOLOGY | - |
dc.subject | FILM | - |
dc.title | Ga-doped indium oxide nanowire phase change random access memory cells | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1088/0957-4484/25/5/055205 | - |
dc.author.google | Jin, B | - |
dc.author.google | Lim, T | - |
dc.author.google | Ju, S | - |
dc.author.google | Latypov, MI | - |
dc.author.google | Kim, HS | - |
dc.author.google | Meyyappan, M | - |
dc.author.google | Lee, JS | - |
dc.relation.volume | 25 | - |
dc.relation.issue | 5 | - |
dc.contributor.id | 10056225 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCIE | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.25, no.5 | - |
dc.identifier.wosid | 000330191400007 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 5 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 25 | - |
dc.contributor.affiliatedAuthor | Jin, B | - |
dc.contributor.affiliatedAuthor | Kim, HS | - |
dc.contributor.affiliatedAuthor | Meyya Meyyappan | - |
dc.contributor.affiliatedAuthor | Jeong-Soo Lee | - |
dc.identifier.scopusid | 2-s2.0-84892161315 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.description.scptc | 3 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | IN2O3 NANOWIRES | - |
dc.subject.keywordPlus | DRIVEN | - |
dc.subject.keywordPlus | NONVOLATILE | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordAuthor | phase change random access memory | - |
dc.subject.keywordAuthor | Ga-doped In2O3 nanowire | - |
dc.subject.keywordAuthor | crystalline | - |
dc.subject.keywordAuthor | amorphous | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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