Fano resonance in Raman scattering of graphene
SCIE
SCOPUS
- Title
- Fano resonance in Raman scattering of graphene
- Authors
- Yoon, D; Jeong, D; Lee, HJ; Saito, R; Son, YW; Lee, HC; Cheong, H
- Date Issued
- 2013-09
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG. (C) 2013 Elsevier Ltd. All rights reserved.
- Keywords
- BORN-OPPENHEIMER APPROXIMATION; SPECTROSCOPY; BREAKDOWN; MODES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14788
- DOI
- 10.1016/J.CARBON.2013.05.019
- ISSN
- 0008-6223
- Article Type
- Article
- Citation
- CARBON, vol. 61, page. 373 - 378, 2013-09
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- There are no files associated with this item.
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