DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yeom, HW | - |
dc.contributor.author | Yoo, K | - |
dc.contributor.author | Oh, DH | - |
dc.date.accessioned | 2016-03-31T08:15:00Z | - |
dc.date.available | 2016-03-31T08:15:00Z | - |
dc.date.created | 2014-03-04 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 0039-6028 | - |
dc.identifier.other | 2011-OAK-0000029103 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14888 | - |
dc.description.abstract | Electronic band structures of Ga-induced dense overlayers on the Si(111) surface have been investigated using angle-resolved photoelectron spectroscopy and first-principle density-functional theory calculations. The well-known incommensurate 6.3 x 6.3 phase formed by the growth on the Si(111)7x7 surface and the newly found 1 x 1 phase grown on the preformed Si(111)root 3 x root 3-Ga surface are characterized in detail. A highly dispersive surface state (S) is observed for the incommensurate phase but only a weakly dispersing one (S') for the 1 x 1 surface. Both surfaces are found to be nonmetallic, with their surface states fully occupied. The theoretical calculation reproduces well the S band of the 6.3 x 6.3 phase on the basis of a simple 1 x 1 Ga-Si bilayer structure formed with substitutional Ga atoms, which was proposed previously. No explicit sign of the incommensurate periodicity is found in the measured band dispersions, indicating a very weak incommensurate potential. The S band is shown to originate in the sp(2)-like planar bonds within the Ga-Si bilayer. The width of the S band is sensitive to the surface strain in the calculation and about 8% expansion of the Ga-Si bilayer lattice was needed to reproduce the measured dispersions, which is in good agreement with the previous X-ray study. On the other hand, the surface state S of the commensurate 1 x 1 phase cannot be explained by any simple model of a substitutional or adsorbed Ga layer. Further structural studies are thus requested. The second Ga layer, which is metallic, grows two-dimensionally over this 1 x 1 layer up to a total coverage of about 5 ML. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER | - |
dc.relation.isPartOf | SURFACE SCIENCE | - |
dc.subject | Gallium | - |
dc.subject | Silicon | - |
dc.subject | Angle-resolved photoemission | - |
dc.subject | Surface electronic phenomena | - |
dc.subject | Metal-Semiconductor interface | - |
dc.subject | RESOLVED PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject | TOTAL-ENERGY CALCULATIONS | - |
dc.subject | WAVE BASIS-SET | - |
dc.subject | SILICON SURFACE | - |
dc.subject | RECONSTRUCTIONS | - |
dc.subject | MONOLAYER | - |
dc.subject | GALLIUM | - |
dc.subject | SYSTEM | - |
dc.subject | STATES | - |
dc.title | Electronic structures of Ga-induced incommensurate and commensurate overlayers on the Si(111) surface | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | - |
dc.identifier.doi | 10.1016/J.SUSC.2010.10.012 | - |
dc.author.google | Yeom, HW | - |
dc.author.google | Yoo, K | - |
dc.author.google | Oh, DH | - |
dc.relation.volume | 605 | - |
dc.relation.issue | 1-2 | - |
dc.relation.startpage | 146 | - |
dc.relation.lastpage | 152 | - |
dc.contributor.id | 10080808 | - |
dc.relation.journal | SURFACE SCIENCE | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SURFACE SCIENCE, v.605, no.1-2, pp.146 - 152 | - |
dc.identifier.wosid | 000286021000021 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 152 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 146 | - |
dc.citation.title | SURFACE SCIENCE | - |
dc.citation.volume | 605 | - |
dc.contributor.affiliatedAuthor | Yeom, HW | - |
dc.identifier.scopusid | 2-s2.0-78649675643 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 5 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | RESOLVED PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | TOTAL-ENERGY CALCULATIONS | - |
dc.subject.keywordPlus | WAVE BASIS-SET | - |
dc.subject.keywordPlus | SILICON SURFACE | - |
dc.subject.keywordPlus | RECONSTRUCTIONS | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | GALLIUM | - |
dc.subject.keywordPlus | SYSTEM | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordAuthor | Gallium | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | Angle-resolved photoemission | - |
dc.subject.keywordAuthor | Surface electronic phenomena | - |
dc.subject.keywordAuthor | Metal-Semiconductor interface | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
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