DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fu, WY | - |
dc.contributor.author | Qin, SY | - |
dc.contributor.author | Liu, L | - |
dc.contributor.author | Kim, TH | - |
dc.contributor.author | Hellstrom, S | - |
dc.contributor.author | Wang, WL | - |
dc.contributor.author | Liang, WJ | - |
dc.contributor.author | Bai, XD | - |
dc.contributor.author | Li, AP | - |
dc.contributor.author | Wang, EG | - |
dc.date.accessioned | 2016-03-31T08:21:03Z | - |
dc.date.available | 2016-03-31T08:21:03Z | - |
dc.date.created | 2014-01-29 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.other | 2011-OAK-0000028665 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/15109 | - |
dc.description.abstract | Complex nanostructures such as branched semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we report on the electrical transport properties of individual CdS tetrapods in a field effect transistor (FET) configuration with a ferroelectric Ba0.7Sr0.3TiO3 film as high-k, switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy (STM) is used to probe the electrical transport through individual nanotetrapods at different temperatures. A p-type field effect is observed at room temperature, owing to the enhanced gate capacitance coupling. And the reversible remnant polarization of the ferroelectric gate dielectric leads to a well-defined nonvolatile memory effect. The field effect is shown to originate from the channel tuning in the arm/core/arm junctions of nanotetrapods. At low temperature (8.5 K), the nanotetrapod devices exhibit a ferroelectric-modulated single-electron transistor (SET) behavior. The results illustrate how the characteristics of a ferroelectric such as switchable polarization and high dielectric constant can be exploited to control the functionality of individual three-dimensional nanoarchitectures. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.relation.isPartOf | Nano Letters | - |
dc.subject | Nanotetrapod | - |
dc.subject | ferroelectric | - |
dc.subject | field effect | - |
dc.subject | nonvolatile memory | - |
dc.subject | band alignment | - |
dc.subject | scanning probe microscopy | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | CARBON-NANOTUBE | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | MEMORY | - |
dc.subject | NANOCRYSTALS | - |
dc.subject | DIELECTRICS | - |
dc.subject | TETRAPODS | - |
dc.subject | GROWTH | - |
dc.title | Ferroelectric Gated Electrical Transport in CdS Nanotetrapods | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | - |
dc.identifier.doi | 10.1021/NL104398V | - |
dc.author.google | Fu, WY | - |
dc.author.google | Qin, SY | - |
dc.author.google | Liu, L | - |
dc.author.google | Kim, TH | - |
dc.author.google | Hellstrom, S | - |
dc.author.google | Wang, WL | - |
dc.author.google | Liang, WJ | - |
dc.author.google | Bai, XD | - |
dc.author.google | Li, AP | - |
dc.author.google | Wang, EG | - |
dc.relation.volume | 11 | - |
dc.relation.issue | 5 | - |
dc.relation.startpage | 1913 | - |
dc.relation.lastpage | 1918 | - |
dc.contributor.id | 10127399 | - |
dc.relation.journal | Nano Letters | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Nano Letters, v.11, no.5, pp.1913 - 1918 | - |
dc.identifier.wosid | 000290373000010 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1918 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1913 | - |
dc.citation.title | Nano Letters | - |
dc.citation.volume | 11 | - |
dc.contributor.affiliatedAuthor | Kim, TH | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 18 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CARBON-NANOTUBE | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | TETRAPODS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | Nanotetrapod | - |
dc.subject.keywordAuthor | ferroelectric | - |
dc.subject.keywordAuthor | field effect | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordAuthor | band alignment | - |
dc.subject.keywordAuthor | scanning probe microscopy | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.