Simultaneous Formation of Ohmic Contacts on p (+)- and n (+)-4H-SiC Using a Ti/Ni Bilayer
SCIE
SCOPUS
- Title
- Simultaneous Formation of Ohmic Contacts on p (+)- and n (+)-4H-SiC Using a Ti/Ni Bilayer
- Authors
- Joo, SJ; Baek, S; Kim, SC; Lee, JS
- Date Issued
- 2013-10
- Publisher
- Springer
- Abstract
- In this work, Ti/Ni bilayer contacts were fabricated on both p (+)- and n (+)-4H-SiC formed by ion implantation, and the effects of the Ti interlayer on the contact resistance and interfacial microstructure were studied. Adoption of a thin (10 nm) Ti interlayer resulted in specific contact resistance of 4.8 mu a"broken vertical bar cm(2) and 1.3 ma"broken vertical bar cm(2) on n (+)- and p (+)-4H-SiC, respectively, comparable to the values for contacts using only Ni. Moreover, contacts using Ti/Ni provide a flat and uniform interface between Ni2Si and SiC, whereas discontinuous, agglomerated Ni2Si islands are formed without the use of a Ti interlayer. In addition, the Ti interlayer was demonstrated to effectively dissociate the thin oxide film on SiC, which is advantageous for low-resistance, reliable ohmic contact formation. In summary, use of a Ti/Ni bilayer is a promising solution for one-step formation of ohmic contacts on both p (+)- and n (+)-4H-SiC, being especially suitable for SiC n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) fabrication.
- Keywords
- 4H-SiC; ohmic; contact; Ti; Ni; SILICON-CARBIDE; ELECTRICAL CHARACTERIZATION; TITANIUM; NICKEL; THICKNESS; SYSTEM; FILM
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15338
- DOI
- 10.1007/S11664-013-2677-X
- ISSN
- 0361-5235
- Article Type
- Article
- Citation
- Journal of Electronic Materials, vol. 42, no. 10, page. 2897 - 2904, 2013-10
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