DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, J | - |
dc.contributor.author | Cagnon, J | - |
dc.contributor.author | Boesch, DS | - |
dc.contributor.author | Stemmer, S | - |
dc.date.accessioned | 2016-03-31T08:32:22Z | - |
dc.date.available | 2016-03-31T08:32:22Z | - |
dc.date.created | 2013-05-01 | - |
dc.date.issued | 2008-06 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.other | 2008-OAK-0000027545 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/15533 | - |
dc.description.abstract | Tunnel junction devices employing epitaxial, (001)-oriented SrTiO(3) barriers with thicknesses between 4 and 5nm were fabricated by sputtering on (001) Pt/MgO substrates. The quality of the Pt/SrTiO(3) interface was characterized by transmission electron microscopy and the current transport studied as a function of temperature and bias field. At low voltages the junctions showed excellent insulting properties and temperature dependent, non-linear current-voltage characteristics. If junctions were biased to high fields (>1.25 MV/cm) current hysteresis was observed. The hysteresis is shown to be due to time-dependent tunnel barrier properties at high fields. (C) 2008 The Japan Society of Applied Physics. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | The Japanese Society of Applied Physics | - |
dc.relation.isPartOf | Applied Physics Express | - |
dc.subject | THIN-FILM | - |
dc.subject | SPIN-POLARIZATION | - |
dc.subject | JUNCTIONS | - |
dc.subject | FERROELECTRICITY | - |
dc.subject | TEMPERATURE | - |
dc.subject | DEPENDENCE | - |
dc.title | Epitaxial SrTiO(3) tunnel barriers on Pt/MgO substrates | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1143/APEX.1.061603 | - |
dc.author.google | Son, J | - |
dc.author.google | Cagnon, J | - |
dc.author.google | Boesch, DS | - |
dc.author.google | Stemmer, S | - |
dc.relation.volume | 1 | - |
dc.relation.issue | 6 | - |
dc.contributor.id | 10138992 | - |
dc.relation.journal | Applied Physics Express | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Applied Physics Express, v.1, no.6 | - |
dc.identifier.wosid | 000257272600013 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 6 | - |
dc.citation.title | Applied Physics Express | - |
dc.citation.volume | 1 | - |
dc.contributor.affiliatedAuthor | Son, J | - |
dc.identifier.scopusid | 2-s2.0-57649089153 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 11 | - |
dc.description.scptc | 7 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | SPIN-POLARIZATION | - |
dc.subject.keywordPlus | JUNCTIONS | - |
dc.subject.keywordPlus | FERROELECTRICITY | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.