Thermally Evaporated SiO Thin Films As a Versatile Interlayer for Plasma-Based OLED Passivation
SCIE
SCOPUS
- Title
- Thermally Evaporated SiO Thin Films As a Versatile Interlayer for Plasma-Based OLED Passivation
- Authors
- Won Min Yun; Jaeyoung Jang; Sooji Nam; Lae Ho Kim; Sang Joon Seo; Park, CE
- Date Issued
- 2012-06
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Silicon monoxide (SiO) thin films were introduced as an efficient interlayer for achieving plasma-based organic light-emitting diode (OLED) surface passivation. The SiO thin films could be consecutively formed via thermal evaporation, without breaking the vacuum, after deposition of the OLED cathode. The plasma resistivity and UV-blocking characteristics of the SiO interlayer protected the OLED devices against electrical and optical degradation during the plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) passivation processes. In addition, the nonconformal deposition and hydroxyl group-rich surface characteristics of the SiO thin films yielded enhanced surface pinhole coverage and a higher initial film density in the subsequently deposited PEALD-based Al2O3 barrier film. As a result, the OLEDs with a SiO/Al2O3 bilayer passivation layer displayed a remarkably increased device shelf life compared to devices prepared using Al2O3-only passivation. A MOCON test showed that the water vapor transmission rate (WVTR) of the SiO/Al2O3 bilayer film was 0.0033 g/(m(2) day), 2.3 times lower than the rate of a single Al2O3 barrier film. The results of our study demonstrated the multipurpose role of a SiO interlayer in plasma-based OLED passivation. The layer acted as a damage-free protective layer for the underlying OLED devices and an assistant layer to improve the upper barrier film performance.
- Keywords
- organic light emitting diodes (OLEDs); thin film encapsulation; protective interlayer; barrier property enhancement; silicon monoxide (SiO); passivation; ATOMIC LAYER DEPOSITION; GAS-DIFFUSION BARRIERS; LIGHT-EMITTING DEVICES; CONJUGATED POLYMERS; DIODES; ENCAPSULATION; PERMEATION; MECHANISMS; AL2O3
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15563
- DOI
- 10.1021/AM300600S
- ISSN
- 1944-8244
- Article Type
- Article
- Citation
- ACS Applied Materials & Interfaces, vol. 4, no. 6, page. 3247 - 3253, 2012-06
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