DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, D | - |
dc.contributor.author | Lee, K | - |
dc.contributor.author | Jeong, S | - |
dc.contributor.author | Lee, J | - |
dc.contributor.author | Choi, B | - |
dc.contributor.author | Lee, J | - |
dc.contributor.author | Kim, O | - |
dc.date.accessioned | 2016-03-31T08:36:53Z | - |
dc.date.available | 2016-03-31T08:36:53Z | - |
dc.date.created | 2013-03-07 | - |
dc.date.issued | 2012-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2012-OAK-0000027312 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/15660 | - |
dc.description.abstract | Low-pressure chemical vapor deposition (LPCVD) is a simple and useful method for the large-area synthesis of graphene films. Here, we have investigated how to adjust and optimize process conditions for the synthesis of single-layer graphene films by LPCVD. Through our experimental procedure, uniform and high-quality graphene films could be grown on Cu foil at 1000 degrees C for 20 min with an H-2 flow rate of 20 sccm, CH4 flow rate of 40 sccm, total pressure of 1.7 Torr, and a fast cooling rate (>10 degrees C/s). In a Raman spectrum measured from synthesized graphene film, we found that the full width at half-maximum (FWHM) of a symmetric 2D peak centered at 2682.5 cm(-1) was 34 cm(-1) and the 2D-to-G intensity ratio was 1.35. (C) 2012 The Japan Society of Applied Physics | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | Japanese Journal of Applied Physics | - |
dc.title | Process optimization for synthesis of high-quality graphene films by low-pressure chemical vapor deposition | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1143/JJAP.51.06FD21 | - |
dc.author.google | Lee, D | - |
dc.author.google | Lee, K | - |
dc.author.google | Jeong, S | - |
dc.author.google | Lee, J | - |
dc.author.google | Choi, B | - |
dc.author.google | Kim, O | - |
dc.relation.volume | 51 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 06FD21 | - |
dc.contributor.id | 10087230 | - |
dc.relation.journal | Japaness Journal of Applied Physics | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.51, no.6, pp.6FD21-1 - 6FD21-4 | - |
dc.identifier.wosid | 000306189800040 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 6FD21-4 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 6FD21-1 | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 51 | - |
dc.contributor.affiliatedAuthor | Lee, J | - |
dc.contributor.affiliatedAuthor | Kim, O | - |
dc.identifier.scopusid | 2-s2.0-84863308751 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.description.scptc | 1 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FEW-LAYER GRAPHENE | - |
dc.subject.keywordPlus | BILAYER GRAPHENE | - |
dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
dc.subject.keywordPlus | RAMAN-SPECTROSCOPY | - |
dc.subject.keywordPlus | CARBON | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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