DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gu, GH | - |
dc.contributor.author | Park, SM | - |
dc.contributor.author | Park, CG | - |
dc.date.accessioned | 2016-03-31T08:39:58Z | - |
dc.date.available | 2016-03-31T08:39:58Z | - |
dc.date.created | 2013-03-15 | - |
dc.date.issued | 2012-06 | - |
dc.identifier.issn | 1598-9623 | - |
dc.identifier.other | 2012-OAK-0000027096 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/15777 | - |
dc.description.abstract | Effects of vacuum conditions on the oxygen content and microstructure of Mo layers used with Cu gate lines as thin-film transistor-liquid crystal display diffusion barriers were investigated. Mo was deposited using ion-beam sputtering at 1.0 x 10(-5) and 7.0 x 10(-7) Torr. The Mo layer oxygen content and the microstructure and changes in chemical composition of the Cu/Mo/SiO2/Si layer during annealing were examined. The Mo layer microstructure was influenced by oxygen; increasing concentration increased the energy required for secondary grain growth. Growth was suppressed at high oxygen levels. Therefore, diffusion barrier performance is enhanced by finer Mo layer grain sizes. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | HANRIMWON PUBLISHING CO,. | - |
dc.relation.isPartOf | METALS AND MATERIALS INTERNATIONAL | - |
dc.subject | thin films | - |
dc.subject | crystal growth | - |
dc.subject | diffusion | - |
dc.subject | crystal structure | - |
dc.subject | transmission electron microscopy (TEM) | - |
dc.subject | THIN-FILMS | - |
dc.subject | COPPER | - |
dc.subject | OXIDATION | - |
dc.subject | AL | - |
dc.subject | SI | - |
dc.subject | RELIABILITY | - |
dc.subject | METALS | - |
dc.subject | TA | - |
dc.title | Impurity-controlled Mo films as diffusion barriers for Cu metallization | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1007/S12540-012-3021-3 | - |
dc.author.google | Gu, GH | - |
dc.author.google | Park, SM | - |
dc.author.google | Park, CG | - |
dc.relation.volume | 18 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 517 | - |
dc.relation.lastpage | 520 | - |
dc.contributor.id | 10069857 | - |
dc.relation.journal | METALS AND MATERIALS INTERNATIONAL | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | METALS AND MATERIALS INTERNATIONAL, v.18, no.3, pp.517 - 520 | - |
dc.identifier.wosid | 000305689900021 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 520 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 517 | - |
dc.citation.title | METALS AND MATERIALS INTERNATIONAL | - |
dc.citation.volume | 18 | - |
dc.contributor.affiliatedAuthor | Park, CG | - |
dc.identifier.scopusid | 2-s2.0-84863819680 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.description.scptc | 1 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | AL | - |
dc.subject.keywordPlus | METALS | - |
dc.subject.keywordPlus | SIZE | - |
dc.subject.keywordPlus | TA | - |
dc.subject.keywordAuthor | thin films | - |
dc.subject.keywordAuthor | crystal growth | - |
dc.subject.keywordAuthor | diffusion | - |
dc.subject.keywordAuthor | crystal structure | - |
dc.subject.keywordAuthor | transmission electron microscopy (TEM) | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
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