DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, M | - |
dc.contributor.author | Liu, X | - |
dc.contributor.author | Sadaf, SM | - |
dc.contributor.author | Lee, D | - |
dc.contributor.author | Park, S | - |
dc.contributor.author | Lee, W | - |
dc.contributor.author | Kim, S | - |
dc.contributor.author | Park, J | - |
dc.contributor.author | Shin, J | - |
dc.contributor.author | Jung, S | - |
dc.contributor.author | Ham, MH | - |
dc.contributor.author | Hwang, H | - |
dc.date.accessioned | 2016-03-31T08:40:53Z | - |
dc.date.available | 2016-03-31T08:40:53Z | - |
dc.date.created | 2013-03-08 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2012-OAK-0000027038 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/15811 | - |
dc.description.abstract | We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VOx) device simultaneously exhibited self-selective performance and memory switching by electroforming. By using W instead of Pt for the top electrode, memory performance was improved in terms of cycling, pulse endurance, and retention properties attributed to a self-formed WOx/VOx interface. Such a phenomenon in a simple metal-oxide-metal structure provides a good potential for future high-density cross-point memory devices by avoiding the sneak-path problem. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc.. | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | Resistive random access memory (ReRAM) | - |
dc.subject | selection property | - |
dc.subject | vanadium oxide (VOx) nanoscale device | - |
dc.subject | RESISTIVE SWITCHING MEMORIES | - |
dc.subject | METAL-INSULATOR-TRANSITION | - |
dc.title | Self-selective Characteristics of Nanoscale VOx Devices for High-density ReRAM Applications | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1109/LED.2012.2188989 | - |
dc.author.google | Son, M | - |
dc.author.google | Liu, X | - |
dc.author.google | Sadaf, SM | - |
dc.author.google | Lee, D | - |
dc.author.google | Park, S | - |
dc.author.google | Lee, W | - |
dc.author.google | Kim, S | - |
dc.author.google | Park, J | - |
dc.author.google | Shin, J | - |
dc.author.google | Jung, S | - |
dc.author.google | Ham, MH | - |
dc.author.google | Hwang, H | - |
dc.relation.volume | 33 | - |
dc.relation.issue | 5 | - |
dc.relation.startpage | 718 | - |
dc.relation.lastpage | 720 | - |
dc.contributor.id | 10079928 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.33, no.5, pp.718 - 720 | - |
dc.identifier.wosid | 000303322500030 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 720 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 718 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 33 | - |
dc.contributor.affiliatedAuthor | Hwang, H | - |
dc.identifier.scopusid | 2-s2.0-84860382445 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 29 | - |
dc.description.scptc | 32 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Resistive random access memory (ReRAM) | - |
dc.subject.keywordAuthor | selection property | - |
dc.subject.keywordAuthor | vanadium oxide (VOx) nanoscale device | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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