DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woosung Kwon | - |
dc.contributor.author | Sungan Do | - |
dc.contributor.author | Dong Chan Won | - |
dc.contributor.author | Rhee, SW | - |
dc.date.accessioned | 2016-03-31T08:47:15Z | - |
dc.date.available | 2016-03-31T08:47:15Z | - |
dc.date.created | 2013-02-25 | - |
dc.date.issued | 2013-02-13 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.other | 2013-OAK-0000026537 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/16048 | - |
dc.description.abstract | We report electrical measurements of films of carbon quantum dots (CQDs) that serve as the channels of field-effects transistors (FETs). To investigate the dependence of the field-effect mobility on ligand length, colloidal CQDs are synthesized and ligand-exchanged with several primary amines of different ligand lengths. We measure current as a function of gate voltage and find that the devices show ambipolar conductivity, with electron and hole mobilities as high as 8.49 X 10(-5) and 3.88 X 10(-5) cm(2) V-1 s(-1) respectively. The electron mobilities are consistently 2-4 times larger than the hole mobilities. Furthermore, the mobilities decrease exponentially with the increase of the ligand length, which is well-described by the Miller-Abrahams model for nearest-neighbor hopping. Our results provide a theoretical basis to examine charge transport in CQD films and offer new prospects for the fabrication of high-mobility CQD-based optoelectronic devices, including solar cells, light-emitting devices, and optical sensors. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS Applied Materials & Interfaces | - |
dc.subject | carbon quantum dots | - |
dc.subject | mobility | - |
dc.subject | ligand exchange | - |
dc.subject | ligand length | - |
dc.subject | emulsion template | - |
dc.subject | field-effect transistors | - |
dc.subject | ONE-STEP SYNTHESIS | - |
dc.subject | MOLECULAR JUNCTIONS | - |
dc.subject | NANOCRYSTALS | - |
dc.subject | NANOPARTICLES | - |
dc.subject | GRAPHITE | - |
dc.subject | SOLIDS | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | NANODOTS | - |
dc.subject | FILMS | - |
dc.subject | SOOT | - |
dc.title | Carbon Quantum Dot-Based Field-Effect Transistors and Their Ligand Length-Dependent Carrier Mobility | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1021/AM3023898 | - |
dc.author.google | Kwon W., Do S., Won D.C., Rhee S.-W. | - |
dc.relation.volume | 5 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 822 | - |
dc.relation.lastpage | 827 | - |
dc.contributor.id | 10052631 | - |
dc.relation.journal | ACS Applied Materials & Interfaces | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS Applied Materials & Interfaces, v.5, no.3, pp.822 - 827 | - |
dc.identifier.wosid | 000315079700048 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 827 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 822 | - |
dc.citation.title | ACS Applied Materials & Interfaces | - |
dc.citation.volume | 5 | - |
dc.contributor.affiliatedAuthor | Rhee, SW | - |
dc.identifier.scopusid | 2-s2.0-84873673441 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 22 | - |
dc.description.scptc | 24 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ONE-STEP SYNTHESIS | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | NANODOTS | - |
dc.subject.keywordPlus | SOLIDS | - |
dc.subject.keywordAuthor | carbon quantum dots | - |
dc.subject.keywordAuthor | mobility | - |
dc.subject.keywordAuthor | ligand exchange | - |
dc.subject.keywordAuthor | ligand length | - |
dc.subject.keywordAuthor | emulsion template | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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