Ballistic-mode plasma-based ion implantation for surface-resistivity modification of polyimide film
SCIE
SCOPUS
- Title
- Ballistic-mode plasma-based ion implantation for surface-resistivity modification of polyimide film
- Authors
- Park, B; Kim, J; Cho, M; Namkung, W; Kim, SJ; Yoo, HY
- Date Issued
- 2012-06
- Publisher
- IEEE
- Abstract
- 5 Plasma-based ion implantation (PBII) is the well-established technique for material surface modification. In this paper, we described the ballistic-mode PBII process in which repetitive high-voltage pulses are applied to the grid a few centimeters from a polyimide (PI) film target. The high-voltage pulse applied to the grid has the peak values of -30 kV, width of 2.5 mu s, rise time of 1.5 mu s, and fall time of 0.5 or 40 mu s. In this process, ions propagate ballistically from a grid to the PI film and modify the surface resistivity of the PI film. The efficiency of surface-resistivity modification depends on the fall time of the pulse applied to the grid. The ballistic-mode PBII process affects the surface characteristics of PI to a depth of similar to 90 nm.
- Keywords
- Insulator surface modification; ion implantation; pulse modulator; surface resistivity; DISSIPATION; TECHNOLOGY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/16442
- DOI
- 10.1109/TPS.2012.219
- ISSN
- 0093-3813
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON PLASMA SCIENCE, vol. 40, no. 6, page. 1749 - 1752, 2012-06
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