Enhancement of wall-plug efficiency in vertical InGaN/GaN LEDs by improved current spreading
SCIE
SCOPUS
- Title
- Enhancement of wall-plug efficiency in vertical InGaN/GaN LEDs by improved current spreading
- Authors
- Son, JH; Kim, BJ; Ryu, CJ; Song, YH; Lee, HK; Choi, JW; Lee, JL
- Date Issued
- 2012-03-12
- Publisher
- THE OPTICAL SOCIETY
- Abstract
- We present the enhancement of wall-plug efficiency in vertical InGaN/GaN light-emitting diodes (V-LEDs) by improved current spreading with a novel Al2O3 current blocking layer (CBL). The Al2O3 CBL deposited by electron-beam evaporation shows high transmittance and good corrosion resistance to acidic solutions. V-LEDs with an Al2O3 CBL show similar light output power but lower forward voltage as compared to those with a SiO2 CBL deposited by plasma-enhanced chemical vapor deposition. As a result, the wall-plug efficiency of V-LEDs with an Al2O3 CBL at 500 mA was improved by 5% as compared to those with a SiO2 CBL, and by 19% as compared to those without a CBL. (C) 2012 Optical Society of America
- Keywords
- LIGHT-EMITTING-DIODES; GAN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/16594
- DOI
- 10.1364/OE.20.00A287
- ISSN
- 1094-4087
- Article Type
- Article
- Citation
- OPTICS EXPRESS, vol. 20, no. 6, page. A287 - A292, 2012-03-12
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- There are no files associated with this item.
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