Molecular Weight-Induced Structural Transition of Liquid-Crystalline Polymer Semiconductor for High-Stability Organic Transistor
SCIE
SCOPUS
- Title
- Molecular Weight-Induced Structural Transition of Liquid-Crystalline Polymer Semiconductor for High-Stability Organic Transistor
- Authors
- Kim, DH; Lee, J; Park, JI; Chung, JW; Lee, WH; Giri, G; Yoo, B; Koo, B; Kim, JY; Jin, YW; Cho, K; Lee, BL; Lee, S
- Date Issued
- 2011-12-06
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- In order to fabricate polymer field-effect transistors (PFETs) with high electrical stability under bias-stress, it is crucial to minimize the density of charge trapping sites caused by the disordered regions. Here we report PFETs with excellent electrical stability comparable to that of single-crystalline organic semiconductors by specifically controlling the molecular weight (MW) of the donor-acceptor type copolymer semiconductors, poly (didodecylquaterthiophene-alt-didodecylbithiazole). We found that MW-induced thermally structural transition from liquid-crystalline to semi-crystalline phases strongly affects the device performance (charge-carrier mobility and electrical bias-stability) as well as the nanostructures such as the molecular ordering and the morphological feature. In particular, for the polymer with a MW of 22 kDa, the transfer curves varied little (Delta V-th = 3 similar to 4 V) during a period of prolonged bias stress (about 50 000 s) under ambient conditions. This enhancement of the electrical bias-stability can be attributed to highly ordered liquid-crystalline nanostructure of copolymer semiconductors on dielectric surface via the optimization of molecular weights.
- Keywords
- THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-MOBILITY; CHARGE-TRANSPORT; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); POLYTHIOPHENE; COPOLYMERS; MORPHOLOGY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/16651
- DOI
- 10.1002/ADFM.201101021
- ISSN
- 1616-301X
- Article Type
- Article
- Citation
- ADVANCED FUNCTIONAL MATERIALS, vol. 21, no. 23, page. 4442 - 4447, 2011-12-06
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