DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jae Won Yang | - |
dc.contributor.author | Geunsik Lee | - |
dc.contributor.author | Kim, JS | - |
dc.contributor.author | Kim, KS | - |
dc.date.accessioned | 2016-03-31T09:13:16Z | - |
dc.date.available | 2016-03-31T09:13:16Z | - |
dc.date.created | 2012-01-09 | - |
dc.date.issued | 2011-10-20 | - |
dc.identifier.issn | 1948-7185 | - |
dc.identifier.other | 2011-OAK-0000024759 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/16842 | - |
dc.description.abstract | The band gap opening of graphene is the most desired property in the device industry because it is vital to the application of graphene as a logical device of semiconductors. Here, we show how to make a reasonably wide band gap in graphene. This is accomplished with bilayer graphene (BLG) dual-doped with FeCl3-acceptor and K-donor. To elucidate this phenomenon, we employed the first-principles method taking into account van der Waals interaction. For the FeCl3 adsorbed BLG, the optimal distance between the adjacent graphene and FeCl3 layers is 4.6-4.8 angstrom, consistent with experiments. Due to the high electronegativity of FeCl3, these graphene layers are hole-doped. The dual-doped BLG gives a band gap of 0.27 eV due to broken symmetry, with a Dirac point shift by -0.09 eV. This increased band gap and proper Dirac point shift could make the dual-doped BLG useful for applications toward future field effect transistor devices. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | JOURNAL OF PHYSICAL CHEMISTRY LETTERS | - |
dc.subject | GENERALIZED GRADIENT APPROXIMATION | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | INTERCALATION COMPOUNDS | - |
dc.subject | BILAYER GRAPHENE | - |
dc.subject | ELECTRONIC-STRUCTURE | - |
dc.subject | GRAPHITE | - |
dc.subject | FECL3-GRAPHITE | - |
dc.subject | MOSSBAUER | - |
dc.subject | DEVICE | - |
dc.subject | FECL3 | - |
dc.title | Gap Opening of Graphene by Dual FeCl(3)-Acceptor and K-Donor Doping | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | - |
dc.identifier.doi | 10.1021/JZ201098U | - |
dc.author.google | Yang, JW | - |
dc.author.google | Lee, G | - |
dc.author.google | Kim, JS | - |
dc.author.google | Kim, KS | - |
dc.relation.volume | 2 | - |
dc.relation.issue | 20 | - |
dc.relation.startpage | 2577 | - |
dc.relation.lastpage | 2581 | - |
dc.contributor.id | 10051176 | - |
dc.relation.journal | JOURNAL OF PHYSICAL CHEMISTRY LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY LETTERS, v.2, no.20, pp.2577 - 2581 | - |
dc.identifier.wosid | 000296128400013 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2581 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 2577 | - |
dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY LETTERS | - |
dc.citation.volume | 2 | - |
dc.contributor.affiliatedAuthor | Kim, JS | - |
dc.contributor.affiliatedAuthor | Kim, KS | - |
dc.identifier.scopusid | 2-s2.0-80054929379 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 45 | - |
dc.description.scptc | 42 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | GENERALIZED GRADIENT APPROXIMATION | - |
dc.subject.keywordPlus | ELECTRONIC BAND-STRUCTURE | - |
dc.subject.keywordPlus | INTERCALATION COMPOUNDS | - |
dc.subject.keywordPlus | GRAPHITE | - |
dc.subject.keywordPlus | MOSSBAUER | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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