Exchange-Induced Electron Transport in Heavily Phosphorus-Doped Si Nanowires
SCIE
SCOPUS
- Title
- Exchange-Induced Electron Transport in Heavily Phosphorus-Doped Si Nanowires
- Authors
- Park, TE; Min, BC; Kim, I; Yang, JE; Jo, MH; Chang, J; Choi, HJ
- Date Issued
- 2011-11
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Heavily phosphorus-doped silicon nanowires (Si NWS) show intriguing transport phenomena at low temperature. As we decrease the temperature, the resistivity of the Si NWs initially decreases, like metals, and starts to increase logarithmically below a resistivity minimum temperature (T,,,), which is accompanied by (i) a zero-bias dip in the differential conductance and (ii) anisotropic negative magnetoresistance (MR), depending on the angle between the applied magnetic field and current flow. These results are associated with the impurity band conduction and electron scattering by the localized spins at phosphorus donor states. The analysis on the MR reveals that the localized spins are coupled antiferromagnetically at low temperature via the exchange interaction.
- Keywords
- Silicon; nanowire; phosphorus; impurity band conduction; magnetoresistance; exchange interaction; METALLIC IMPURITY CONDUCTION; FIELD-EFFECT TRANSISTORS; N-TYPE SILICON; NEGATIVE MAGNETORESISTANCE; ROOM-TEMPERATURE; SPIN TRANSPORT; SPINTRONICS; RESONANCE; SEMICONDUCTORS; PERFORMANCE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17002
- DOI
- 10.1021/NL202535D
- ISSN
- 1530-6984
- Article Type
- Article
- Citation
- NANO LETTERS, vol. 11, no. 11, page. 4730 - 4735, 2011-11
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- There are no files associated with this item.
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