Control of the pi plasmon in a single layer graphene by charge doping
SCIE
SCOPUS
- Title
- Control of the pi plasmon in a single layer graphene by charge doping
- Authors
- Shin, SY; Kim, ND; Kim, JG; Kim, KS; Noh, DY; Kim, KS; Chung, JW
- Date Issued
- 2011-08-22
- Publisher
- AMER INST PHYSICS
- Abstract
- We report that the behavior of a low-energy pi plasmon excitation in a single layer graphene (SLG) can be modified by doping external potassium (K) atoms, a feature demanded to realize the graphene plasmonics. Using high-resolution electron-energy-loss spectroscopy, we find that upon K-doping the pi plasmon energy increases by 1.1 eV due to the K-induced electron density up to n=7 x 10(13) cm(-2) in SLG. The four modified dispersions for different K-dopings, however, are found to merge into a single universal curve when plotted in the dimensionless coordinates indicating that the unique plasmonic character of SLG is preserved despite the K-dopings. (C) 2011 American Institute of Physics. [doi:10.1063/1.3630230]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17120
- DOI
- 10.1063/1.3630230
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 99, no. 8, 2011-08-22
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