DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, D | - |
dc.contributor.author | Lee, S | - |
dc.contributor.author | Oh, TK | - |
dc.contributor.author | Cha, SY | - |
dc.contributor.author | Hong, SJ | - |
dc.contributor.author | Kang, B | - |
dc.date.accessioned | 2016-03-31T09:41:54Z | - |
dc.date.available | 2016-03-31T09:41:54Z | - |
dc.date.created | 2011-05-16 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.other | 2011-OAK-0000023513 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/17487 | - |
dc.description.abstract | This paper proposes an electrical method of extracting mechanical stress in n-MOSFETs and analyzes the influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation (SOG-filled STI). The proposed method requires only the maximum transconductance g(m.max) and measured subthreshold current I-d(sub.), eliminating the effect of deviations of the mobility mu and effective channel length L-eff that occurred in a previous method using mu. In addition, it eliminates the measurement error due to the drain induced barrier lowering (DIBL) effect in a previous method using I-d(sub.). The tensile stress sigma(t) in the experimental n-MOSFETs was measured as several hundred mega Pascals. An increase of separation distance d between dummy active regions and the Si active region resulted in a decrease of sigma(t) for d > 0.2 mu m. But, sigma(t) decreased when d decreased from 0.2 to 0.09 mu m. (c) 2010 Elsevier B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
dc.subject | Mechanical stress | - |
dc.subject | Shallow trench isolation (STI) | - |
dc.subject | Dummy active patterns | - |
dc.subject | Subthreshold current | - |
dc.subject | Drain induced barrier lowering (DIBL) | - |
dc.subject | ENHANCEMENT | - |
dc.title | Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1016/J.MEE.2010.11.036 | - |
dc.author.google | Kim, D | - |
dc.author.google | Lee, S | - |
dc.author.google | Oh, TK | - |
dc.author.google | Cha, SY | - |
dc.author.google | Hong, SJ | - |
dc.author.google | Kang, B | - |
dc.relation.volume | 88 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 882 | - |
dc.relation.lastpage | 887 | - |
dc.contributor.id | 10071834 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.88, no.6, pp.882 - 887 | - |
dc.identifier.wosid | 000289186500007 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 887 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 882 | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 88 | - |
dc.contributor.affiliatedAuthor | Kang, B | - |
dc.identifier.scopusid | 2-s2.0-79952438288 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 3 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Mechanical stress | - |
dc.subject.keywordAuthor | Shallow trench isolation (STI) | - |
dc.subject.keywordAuthor | Dummy active patterns | - |
dc.subject.keywordAuthor | Subthreshold current | - |
dc.subject.keywordAuthor | Drain induced barrier lowering (DIBL) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
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