SR phase contrast imaging to address the evolution of defects during SiC growth
SCIE
SCOPUS
- Title
- SR phase contrast imaging to address the evolution of defects during SiC growth
- Authors
- Argunova, TS; Gutkin, MY; Je, JH; Mokhov, EN; Nagalyuk, SS; Hwu, Y
- Date Issued
- 2011-04
- Publisher
- WILEY-BLACKWELL
- Abstract
- Sliced SiC boule grown by physical vapor transport is investigated using synchrotron white beam phase contrast imaging combined with Bragg diffraction. The evolution of defects is revealed. In the early growth stage, foreign polytype inclusions not only induce massive generation of full-core dislocations and dislocated micropipes but also attract them, forming slit-type pores at the boundaries of inclusions. In the intermediate stage, when inclusions stop to grow and become overgrown by the matrix, the pore density significantly reduces, which is attributed to their transformation into new micropipes. In the later stage, the micropipe density decreases, providing evidence for their partial annihilation and healing. Mechanisms for the evolution from inclusions to pores and finally to micropipes during the crystal growth are further discussed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Keywords
- crystal growth; crystal structure; defects; SiC; X-ray diffraction; SILICON-CARBIDE; SUBLIMATION GROWTH; MICROPIPES; CRYSTALS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17521
- DOI
- 10.1002/PSSA.201026341
- ISSN
- 1862-6300
- Article Type
- Article
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 208, no. 4, page. 819 - 824, 2011-04
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.