Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities
SCIE
SCOPUS
- Title
- Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities
- Authors
- Chhajed, S; Cho, J; Schubert, EF; Kim, JK; Koleske, DD; Crawford, MH
- Date Issued
- 2011-04
- Publisher
- WILEY-BLACKWELL
- Abstract
- We have experimentally investigated the temperature dependence of optical-output power of light-emitting diodes (LEDs) with different threading dislocation densities (TDDs) to assess the influence of the TDD on the temperature stability of LEDs. Whereas the LED with high TDD shows a 64% decrease in optical-output power when the ambient temperature increases from 20 to 150 degrees C, the LED with low TDD shows only a 54% decrease. The temperature dependence of the optical-output power and current dependence of the characteristic temperature T-ch of LEDs shows that short radiative recombination lifetime and low TDDs are essential to obtain LED characteristics that are tolerant of high temperatures. (c) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Keywords
- dislocation density; GaInN; light-emitting diodes
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17580
- DOI
- 10.1002/PSSA.201026668
- ISSN
- 1862-6300
- Article Type
- Article
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 208, no. 4, page. 947 - 950, 2011-04
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