DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Waldron, EL | - |
dc.contributor.author | Li, YL | - |
dc.contributor.author | Gessmann, T | - |
dc.contributor.author | Schubert, EF | - |
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-03-31T12:29:50Z | - |
dc.date.available | 2016-03-31T12:29:50Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-04-26 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2004-OAK-0000004190 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/17973 | - |
dc.description.abstract | Synchrotron radiation photoemission spectroscopy reveals enhanced oxygen incorporation in AlxGa1-xN as the Al mole fraction increases. It is shown that the increased oxygen donor incorporation can result in a conductivity-type change from p-type to n-type in Mg-doped AlxGa1-xN. Consistent with the conductivity-type change, epitaxial Al0.20Ga0.80N films exhibit n-type conductivity despite heavy Mg doping. The p-type conductivity of bulk AlxGa1-xN with a high Al mole fraction can be improved by employing AlxGa1-xN/AlyGa1-yN superlattices (SLs). At 300 K, Mg-doped Al0.17Ga0.83N/Al0.36Ga0.64N SLs (average Al mole fraction of 23%) exhibit strong p-type conductivity with a specific resistance of 4.6 Omega cm, a hole mobility of 18.8 cm(2)/Vs, and an acceptor activation energy of 195 meV. (C) 2004 American Institute of Physics. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.title | P-type conductivity in bulk AlxGa1-xN and AlxGa1-xN/AlyGa1-yN superlattices with average Al mole fraction > 20% | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1063/1.1728322 | - |
dc.author.google | Kim, JK | - |
dc.author.google | Waldron, EL | - |
dc.author.google | Li, YL | - |
dc.author.google | Gessmann, T | - |
dc.author.google | Schubert, EF | - |
dc.author.google | Jang, HW | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 84 | - |
dc.relation.issue | 17 | - |
dc.relation.startpage | 3310 | - |
dc.relation.lastpage | 3312 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.84, no.17, pp.3310 - 3312 | - |
dc.identifier.wosid | 000220958100030 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 3312 | - |
dc.citation.number | 17 | - |
dc.citation.startPage | 3310 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 84 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-2542491295 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 30 | - |
dc.description.scptc | 27 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | MG-DOPED GAN | - |
dc.subject.keywordPlus | ALGAN/GAN SUPERLATTICES | - |
dc.subject.keywordPlus | ACCEPTOR ACTIVATION | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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