Polarization-induced surface band bendings of GaN films studied by synchrotron radiation photoemission spectroscopy
SCIE
SCOPUS
- Title
- Polarization-induced surface band bendings of GaN films studied by synchrotron radiation photoemission spectroscopy
- Authors
- Jang, HW; Ihm, KW; Kang, TH; Lee, JH; Lee, JL
- Date Issued
- 2003-11
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- The change in the surface band bandings of GaN films with crystal polarity and strain was investigated using synchrotron radiation photoemission spectroscopy. The Ga-face GaN sample showed larger surface band bending than the N-face one by 1.4 eV due to spontaneous polarization-induced sheet charges at the surface, resulting in a higher Schottky barrier height of a Pt contact. For both n-type and p-type GaN, the shift of the surface Fermi level with longitudinal tensile strain (similar to4 x 10(-3)) is negligible, while that with compressive strain (similar to3 x 10(-3)) is significant. This could be attributable to combined effects of piezoelectric polarization-induced sheet charges and the change of bandgap energy with the strains near the surface region. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- Keywords
- CRYSTAL-POLARITY; WURTZITE GAN; N-FACE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18229
- DOI
- 10.1002/pssb.200303543
- ISSN
- 0370-1972
- Article Type
- Article
- Citation
- PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 240, no. 2, page. 451 - 454, 2003-11
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