Two-phase boosted voltage generator for low-voltage DRAMs
SCIE
SCOPUS
- Title
- Two-phase boosted voltage generator for low-voltage DRAMs
- Authors
- Cho, SK; Lee, JH; Park, HJ; Lim, GH; Kim, YH
- Date Issued
- 2003-10
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- A two-phase boosted voltage (V-PP) generator circuit was proposed for use in gigabit DRAMs. It reduced the maximum gate-oxide voltage of pass transistor and the lower limit of supply Voltage to V-PP and V-TN, respectively, while those for the conventional charge-pump circuit are V-PP + V-DD and 1.5 V-TN respectively. Also, the pumping current was increased in the new circuit. The newly proposed two-phase V-PP charge-pump circuit worked successfully at V-DD down to 0.8 V by eliminating the threshold voltage loss of the control pulse generator and was tested successfully in a 0.16-mum test chip using triple-well CMOS technology.
- Keywords
- boosted voltage generator; charge pump; gigabit DRAMs; low voltage
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18323
- DOI
- 10.1109/JSSC.2003.817592
- ISSN
- 0018-9200
- Article Type
- Article
- Citation
- IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 38, no. 10, page. 1726 - 1729, 2003-10
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