DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baik, JM | - |
dc.contributor.author | Kim, HS | - |
dc.contributor.author | Park, CG | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-03-31T12:45:18Z | - |
dc.date.available | 2016-03-31T12:45:18Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-09-29 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2003-OAK-0000003699 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18327 | - |
dc.description.abstract | The microstructural evolution of Mn-implanted p-type GaN has been studied using cross-sectional transmission electron microscopy. As Mn3Ga nanoclusters (3-7 nm) with a hexagonal structure were produced by annealing (less than or equal to800 degreesC), the weak ferromagnetic property emerged. Higher-temperature annealing (greater than or equal to900 degreesC) reduced the ferromagnetic signal and produced antiferromagnetic Mn-nitride nanoclusters, such as Mn6N2.58 and Mn3N2. This provides evidence that the ferromagnetic property was deeply related to microstructural changes of nanoclusters. (C) 2003 American Institute of Physics. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.title | Effect of microstructural evolution on magnetic property of Mn-implanted p-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1063/1.1615676 | - |
dc.author.google | Baik, JM | - |
dc.author.google | Kim, HS | - |
dc.author.google | Park, CG | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 83 | - |
dc.relation.issue | 13 | - |
dc.relation.startpage | 2632 | - |
dc.relation.lastpage | 2634 | - |
dc.contributor.id | 10069857 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.83, no.13, pp.2632 - 2634 | - |
dc.identifier.wosid | 000185521400044 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2634 | - |
dc.citation.number | 13 | - |
dc.citation.startPage | 2632 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 83 | - |
dc.contributor.affiliatedAuthor | Park, CG | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0142025304 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 16 | - |
dc.description.scptc | 14 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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