Ferroelectric properties of highly c-axis oriented Bi4-xLaxTi3O12 capacitors
SCIE
SCOPUS
- Title
- Ferroelectric properties of highly c-axis oriented Bi4-xLaxTi3O12 capacitors
- Authors
- Chon, U; Jang, HM; Park, IW
- Date Issued
- 2003-08
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- Highly c-axis oriented lanthanum-modified bismuth titanate (Bi4-xLaxTi3O12) films having a variety of lanthanum (La) contents were grown on Pt/TiO2/SiO2/Si(100) substrates using metal-organic sol deposition and subsequent annealing at 650 degreesC for 1 h. After systematically examining the ferroelectric properties of Bi4-xLaxTi3O12 films as a function of the La-content, it was concluded that the film with x = 0.85 had the largest remanent polarization in the direction parallel to the c-axis. The Pt/Bi3.15La0.85Ti3O12/Pt capacitor showed a well-saturated polarization-electric field (P-E) switching curve with the switching remanent polarization (2P(r)) value of 33 muC/cm(2) and the coercive field (E-c) of 68 kV/cm at an applied voltage of 10 V. More importantly, the capacitor exhibited fatigue-free behavior up to 6.5 X 10(10) read/write switching cycles at a frequency of 1 MHz. The capacitor also demonstrated an excellent charge-retaining ability and a strong resistance against the imprinting failure. (C) 2003 Elsevier Ltd. All rights reserved.
- Keywords
- lanthanum-modified bismuth titanate; FRAM; MOSD; fatigue-free; BI3.25LA0.75TI3O12 THIN-FILMS; BISMUTH TITANATE; ELECTRICAL-PROPERTIES; DECOMPOSITION; FATIGUE; PT/TI/SIO2/SI(100)
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18371
- DOI
- 10.1016/S0038-1098(03)00485-X
- ISSN
- 0038-1098
- Article Type
- Article
- Citation
- SOLID STATE COMMUNICATIONS, vol. 127, no. 7, page. 469 - 473, 2003-08
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