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Cited 207 time in webofscience Cited 218 time in scopus
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dc.contributor.authorHan, SJ-
dc.contributor.authorJang, TH-
dc.contributor.authorKim, YB-
dc.contributor.authorPark, BG-
dc.contributor.authorPark, JH-
dc.contributor.authorJeong, YH-
dc.date.accessioned2016-03-31T12:47:58Z-
dc.date.available2016-03-31T12:47:58Z-
dc.date.created2009-02-28-
dc.date.issued2003-08-04-
dc.identifier.issn0003-6951-
dc.identifier.other2003-OAK-0000003558-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/18426-
dc.description.abstractContrasting magnetic properties were obtained from bulk Mn-doped ZnO synthesized under different processing conditions. While a ferrimagnetic phase transition was observable in a Zn0.95Mn0.05O sample processed at 1170 K, no such transition was found for a sample with the same composition processed at 1370 K. The detailed magnetic, structural, and spectroscopic studies of these two samples have revealed that the ferrimagnetic transition in the former sample is attributable to the secondary phase, (Mn,Zn)Mn2O4, in the system. For the latter sample processed at higher temperature, no secondary phase was detected and the major feature of the system remained paramagnetic down to 4 K. The implication of the present results for Mn-doped ZnO thin films is discussed. (C) 2003 American Institute of Physics.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.titleMagnetism in Mn-doped ZnO bulk samples prepared by solid state reaction-
dc.typeArticle-
dc.contributor.college물리학과-
dc.identifier.doi10.1063/1.1597414-
dc.author.googleHan, SJ-
dc.author.googleJang, TH-
dc.author.googleKim, YB-
dc.author.googlePark, BG-
dc.author.googlePark, JH-
dc.author.googleJeong, YH-
dc.relation.volume83-
dc.relation.issue5-
dc.relation.startpage920-
dc.relation.lastpage922-
dc.contributor.id10052189-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.83, no.5, pp.920 - 922-
dc.identifier.wosid000184474000036-
dc.date.tcdate2019-01-01-
dc.citation.endPage922-
dc.citation.number5-
dc.citation.startPage920-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume83-
dc.contributor.affiliatedAuthorPark, JH-
dc.contributor.affiliatedAuthorJeong, YH-
dc.identifier.scopusid2-s2.0-0042378461-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc189-
dc.description.scptc187*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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