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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeong, J | - |
| dc.contributor.author | Yong, KJ | - |
| dc.date.accessioned | 2016-03-31T12:50:18Z | - |
| dc.date.available | 2016-03-31T12:50:18Z | - |
| dc.date.created | 2009-04-02 | - |
| dc.date.issued | 2003-06 | - |
| dc.identifier.issn | 0022-0248 | - |
| dc.identifier.other | 2003-OAK-0000003426 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18515 | - |
| dc.description.abstract | Desorption kinetics of tetrakis(diethylamido)zirconium (TDEAZr, Zr(N(C2H5)(2))(4)) from Si(1 0 0) were studied by temperature programmed desorption (TPD) and Auger electron spectroscopy (AES). A TDEAZr desorption peak from condensed multi-layers was observed at 170K for high exposures. Partial decomposition of monolayer TDEAZr proceeded on Si(1 0 0). Un-reacted TDEAZr desorbed molecularly at 320 K. Partially decomposed Zr-diethylamido desorbed at 430 K. AES results indicated that carbon and nitrogen remained on Si(1 0 0) after TPD experiments through the decomposition of diethylamido ligands. (C) 2003 Elsevier Science B.V. All rights reserved. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
| dc.subject | adsorption | - |
| dc.subject | desorption | - |
| dc.subject | surfaces | - |
| dc.subject | chemical vapor deposition processes | - |
| dc.subject | DEPOSITION | - |
| dc.subject | SI(100) | - |
| dc.title | Temperature programmed desorption study of Zr-diethylamido precursor for ZrO2CVD | - |
| dc.type | Article | - |
| dc.contributor.college | 화학공학과 | - |
| dc.identifier.doi | 10.1016/S0022-0248(03)01114-X | - |
| dc.author.google | Jeong, J | - |
| dc.author.google | Yong, KJ | - |
| dc.relation.volume | 254 | - |
| dc.relation.issue | 1-2 | - |
| dc.relation.startpage | 65 | - |
| dc.relation.lastpage | 69 | - |
| dc.contributor.id | 10131864 | - |
| dc.relation.journal | JOURNAL OF CRYSTAL GROWTH | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.254, no.1-2, pp.65 - 69 | - |
| dc.identifier.wosid | 000183234700009 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 69 | - |
| dc.citation.number | 1-2 | - |
| dc.citation.startPage | 65 | - |
| dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
| dc.citation.volume | 254 | - |
| dc.contributor.affiliatedAuthor | Yong, KJ | - |
| dc.identifier.scopusid | 2-s2.0-0037609786 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 11 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | adsorption | - |
| dc.subject.keywordAuthor | desorption | - |
| dc.subject.keywordAuthor | surfaces | - |
| dc.subject.keywordAuthor | chemical vapor deposition processes | - |
| dc.relation.journalWebOfScienceCategory | Crystallography | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Crystallography | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 용기중YONG, KIJUNG
- Dept. of Chemical Enginrg