Thermal decomposition and desorption of diethylamido of tetrakis (diethylamido) zirconium (TDEAZr) on Si(100)

Abstract

The thermal decomposition pathway and desorption of diethylamido of tetrakis(diethylamido)zirconium [TDEAZr, Zr(N(C2H5)(2))(4)] on Si(100) were studied using temperature-programmed desorption (TPD) and X-ray photoelectron spectroscopy (XPS). During TPD experiments, ethylethyleneimine (C2H5N=CHCH3), diethylamine [NH(C2H5)(2)], acetonitrile (CH3CN), ethylene (C2H4) and hydrogen (H-2) desorbed as the main decomposition products of diethylamido, which was chemisorbed on Si(100) through the scission of the zirconium-diethylamido bond in TDEAZr. After TPD runs, the formation of silicon carbide and silicon nitride was observed on the surface by XPS, indicating that a complete decomposition of diethylamido proceeded. This could be a reaction pathway of C, N incorporation in the thin film growth using TDEAZr as a Zr precursor.