DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-03-31T12:54:41Z | - |
dc.date.available | 2016-03-31T12:54:41Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-03 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.other | 2003-OAK-0000003207 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18680 | - |
dc.description.abstract | The chemical bonding state and atomic composition at the surface of p-type GaN were studied by synchrotron radiation photo-emission spectroscopy. Ga-related oxides existed even after surface treatment using HCl solution, causing pinning of the surface Fermi level (E-F) at 0.62 eV above valence band maximum (E-V). Meanwhile, aqua regia treatment is effective in removing the surface oxide, resulting in the movement of the Fermi level toward E-V (E-F - E-V = 0.30 eV). This resulted from the existence of Ga vacancies underneath the surface oxide. As a result, the slope in the plot of Schottky barrier height with the metal work function was increased. (C) 2003 The Electrochemical Society. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.title | Effect of surface treatment on Schottky barrier height of p-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1149/1.1544637 | - |
dc.author.google | Kim, JK | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 150 | - |
dc.relation.issue | 3 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.150, no.3, pp.G209 - G211 | - |
dc.identifier.wosid | 000181093600065 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | G211 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | G209 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 150 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0037348920 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.description.scptc | 51 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.