DC Field | Value | Language |
---|---|---|
dc.contributor.author | Degave, F | - |
dc.contributor.author | Ruterana, P | - |
dc.contributor.author | Nouet, G | - |
dc.contributor.author | Je, JH | - |
dc.contributor.author | Kim, CC | - |
dc.date.accessioned | 2016-03-31T13:04:50Z | - |
dc.date.available | 2016-03-31T13:04:50Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-01 | - |
dc.identifier.issn | 0951-3248 | - |
dc.identifier.other | 2002-OAK-0000002722 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19025 | - |
dc.description.abstract | Low temperature nucleation of GaN on (0001) sapphire is investigated. Depositions were made for 20 s, 40 s, 60 s, 120 s and 180 s at 500degreesC by MOCVD. It is shown that the shortest deposition times give rise to the formation of small cubic crystallites. Subsequently, the density of nucleation islands increases, they grow in height and their shape is modified. They start to transform to wurtzite from the interface with the substrate. These results will be discussed in terms of the operating nucleation and growth mechanisms. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | INSTITUTE OF PHYSICS CONFERENCE SERIES | - |
dc.subject | BUFFER LAYER | - |
dc.title | Structural evolution of GaN nucleation layers during metal-organic chemical vapour deposition growth | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.author.google | Degave, F | - |
dc.author.google | Ruterana, P | - |
dc.author.google | Nouet, G | - |
dc.author.google | Je, JH | - |
dc.author.google | Kim, CC | - |
dc.relation.issue | 169 | - |
dc.relation.startpage | 281 | - |
dc.relation.lastpage | 284 | - |
dc.contributor.id | 10123980 | - |
dc.relation.journal | INSTITUTE OF PHYSICS CONFERENCE SERIES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | INSTITUTE OF PHYSICS CONFERENCE SERIES, no.169, pp.281 - 284 | - |
dc.identifier.wosid | 000176465200059 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | 284 | - |
dc.citation.number | 169 | - |
dc.citation.startPage | 281 | - |
dc.citation.title | INSTITUTE OF PHYSICS CONFERENCE SERIES | - |
dc.contributor.affiliatedAuthor | Je, JH | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.relation.journalWebOfScienceCategory | Microscopy | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Microscopy | - |
dc.relation.journalResearchArea | Physics | - |
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