Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact
SCIE
SCOPUS
- Title
- Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact
- Authors
- Jeon, CM; Jang, HW; Choi, KJ; Bae, SB; Lee, JH; Lee, JL
- Date Issued
- 2002-05
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- AlGaN/GaN heterostructure field effect transistor (HFET) with the room-temperature ohmic contact (1.0 x 10(-4) Omegacm(2)) was demonstrated through the surface treatment using N-2 inductively coupled plasma. The N-2 plasma produced N vacancies on the surface of undoped AlGaN, leading to ohmic contact at as-deposited state, The fabricated HFET exhibited the saturation drain current density of 736 mA/mm and transconductance of 148 mS/mm. This room-temperature ohmic contact was suitable for fabrication of AlGaN/GaN HFET. (C) 2002 Elsevier Science Ltd. All rights reserved.
- Keywords
- MICROSTRUCTURE; BEHAVIOR; GALLIUM; HFETS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19083
- DOI
- 10.1016/S0038-1101(01)00325-2
- ISSN
- 0038-1101
- Article Type
- Article
- Citation
- SOLID-STATE ELECTRONICS, vol. 46, no. 5, page. 695 - 698, 2002-05
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.