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Cited 30 time in webofscience Cited 31 time in scopus
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dc.contributor.authorLee, SH-
dc.contributor.authorJang, HM-
dc.contributor.authorCho, SM-
dc.contributor.authorYi, GC-
dc.date.accessioned2016-03-31T13:07:14Z-
dc.date.available2016-03-31T13:07:14Z-
dc.date.created2009-02-28-
dc.date.issued2002-04-29-
dc.identifier.issn0003-6951-
dc.identifier.other2002-OAK-0000002593-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/19114-
dc.description.abstractEffects of the orientation of ferroelectric domains on the characteristics of polarized Raman spectra were studied using an epitaxially grown PbTiO3 thin film in which the c-axis oriented domains coexist with the a-axis oriented domains on MgO (001). To obtain polarized spectra for both two distinctive c and a domains, we have employed scattering configurations in which the relevant phonon wave vector, k, is perpendicular to the c axis of the tetragonal unit cell. Compared with the mode frequencies of single-crystal PbTiO3, a softening of the E(TO) phonons was evident for both c and a domains, suggesting the presence of a strong tensile film stress. In addition to this, we observed a splitting of the degenerate "silent" mode into two distinctive B-1 and E modes in an epitaxially grown film on MgO (001). (C) 2002 American Institute of Physics.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.titlePolarized Raman scattering of epitaxial PbTiO3 thin film with coexisting c and a domains-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1063/1.1473864-
dc.author.googleLee, SH-
dc.author.googleJang, HM-
dc.author.googleCho, SM-
dc.author.googleYi, GC-
dc.relation.volume80-
dc.relation.issue17-
dc.relation.startpage3165-
dc.relation.lastpage3167-
dc.contributor.id10084272-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.80, no.17, pp.3165 - 3167-
dc.identifier.wosid000175144300045-
dc.date.tcdate2019-01-01-
dc.citation.endPage3167-
dc.citation.number17-
dc.citation.startPage3165-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume80-
dc.contributor.affiliatedAuthorJang, HM-
dc.contributor.affiliatedAuthorYi, GC-
dc.identifier.scopusid2-s2.0-79956047835-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc24-
dc.description.scptc24*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
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